Potential-Induced Degradation (PID): Incomplete Recovery of Shunt Resistance and Quantum Efficiency Losses

Oh, Jaewon; Bowden, Stuart; TamizhMani, GovindaSamy

doi:10.1109/jphotov.2015.2459919

Cited by 70 publications

(50 citation statements)

References 18 publications

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“…This leads to damage of the PN junction and reduction of the open circuit voltage. This conclusion agrees with [13]. Figure 5 shows the direction of the electric field between the ground and solar cells of modules from the same module string.…”

Section: The Potential and The Neutral Point Shift Of Modulesupporting

confidence: 84%

Investigation on Potential-Induced Degradation in a 50 MWp Crystalline Silicon Photovoltaic Power Plant

Huang

Li²,

Sun

et al. 2018

International Journal of Photoenergy

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The regular performance deterioration of P-type crystalline silicon solar modules and module strings caused by potential-induced degradation in a photovoltaic power plant was found in the field. The PID-affected solar modules dismounted from the photovoltaic power plant were further investigated systematically in the laboratory. For the first time, we found that the neutral point of voltage in a module string moved forward to the positive pole for a PID-affected module string as time goes on. Even if low positive voltage is applied to a PID-prone module, it could cause PID. The thermographic and electroluminescence (EL) images of a PID-affected module string also exhibit a regular degradation pattern. This is in good agreement with the measured power loss of the dismounted solar modules under standard test conditions. The results obtained in this paper show that the maximum power degradation rate of solar modules was as high as 53.26% after only one year of operation because of PID in the field. Due to the vast amount of solar modules and incomplete recovery, this is a terrible catastrophe for the owner of a power plant and module producer.

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Section: The Potential and The Neutral Point Shift Of Modulesupporting

confidence: 84%

Investigation on Potential-Induced Degradation in a 50 MWp Crystalline Silicon Photovoltaic Power Plant

Huang

Li²,

Sun

et al. 2018

International Journal of Photoenergy

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show abstract

“…PID has been reported in various silicon PV technologies, such as the conventional p‐type solar cells (aluminium back surface field, Al‐BSF), n‐type PERT solar cells, and interdigitated back‐contact (IBC) solar cells . For p‐type solar cells with an n + /p front junction, PID‐shunting (PID‐s) has been identified as the root cause for PV efficiency loss when the solar cells are negatively biased relative to the frame or the front module surface .…”

Section: Introductionmentioning

confidence: 99%

Elucidating potential‐induced degradation in bifacial PERC silicon photovoltaic modules

Luo

Hacke

Terwilliger

et al. 2018

Progress in Photovoltaics

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This paper elucidates the behavior and underlying mechanism of potential‐induced degradation (PID) on the rear side of p‐type monocrystalline silicon bifacial passivated emitter and rear cell (PERC) photovoltaic modules. At 50°C, 30% relative humidity, and −1000 V bias to the solar cells with aluminium foil on the rear glass surface, the rear‐side performance of bifacial PERC modules at standard testing conditions degraded dramatically after 40 hours with a 40.4%, 36.2%, and 7.2% loss in maximum power (Pmpp), short‐circuit current (Isc), and open‐circuit voltage (Voc), respectively. The front‐side standard testing condition performance, on the other hand, showed less degradation; Pmpp, Isc, and Voc dropped by 12.0%, 5.2%, and 5.3%, respectively. However, negligible degradation was observed when the solar cells were positively biased. Based on I‐V characteristics, electroluminescence, external quantum efficiency measurements, and the effective minority‐carrier lifetime simulation, the efficiency loss is shown to be caused by the surface polarization effect; positive charges are attracted to the passivation/antireflection stack on the rear surface and reduce its field effect passivation performance. Extended PID testing to 100 hours showed an increase in device performances (relative to 40 hours) due to the formation of an inversion layer along the rear surface. In addition, replacing ethylene‐vinyl acetate copolymer with polyolefin elastomer films significantly slows down the progression of PID, whereas a glass/transparent backsheet design effectively protects the rear side of bifacial PERC modules from PID. Furthermore, PID on the rear side of bifacial PERC modules is fully recoverable, and light greatly promotes recovery of the observed PID.

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“…B). It is reported that the EQE decreases when the shunt resistance of the solar cell is extremely low . The normalized EQE curve derived from the ratio between the J sc measured by the light I‐V and by the QE, however, shows no change compared to the initial curve.…”

Section: Resultsmentioning

confidence: 97%

Potential induced degradation of n‐type crystalline silicon solar cells with p⁺ front junction

Bae

Lee

et al. 2017

Energy Science & Engineering

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N-type silicon-based solar cells are currently being used for achieving high efficiency. However, most of the photovoltaic modules already constructed are based on p-type silicon solar cells, and there are few studies on potential induced degradation (PID) in n-type solar cells. In this study, we investigated PID in n-type silicon solar cells with a front p+ emitter. Further, the PID characteristics of n-type solar cells are compared with those of p-type solar cells. The electrical properties of PID in solar cells are observed with the light I-V, quantum efficiency (QE), and electroluminescence (EL). The possible causes for the change in the external quantum efficiency (EQE) after PID are interpreted using PC1D and are discussed by comparing the experimental results with the simulation results. 31

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Potential-Induced Degradation (PID): Incomplete Recovery of Shunt Resistance and Quantum Efficiency Losses

Cited by 70 publications

References 18 publications

Investigation on Potential-Induced Degradation in a 50 MWp Crystalline Silicon Photovoltaic Power Plant

Investigation on Potential-Induced Degradation in a 50 MWp Crystalline Silicon Photovoltaic Power Plant

Elucidating potential‐induced degradation in bifacial PERC silicon photovoltaic modules

Potential induced degradation of n‐type crystalline silicon solar cells with p⁺ front junction

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Potential-Induced Degradation (PID): Incomplete Recovery of Shunt Resistance and Quantum Efficiency Losses

Cited by 70 publications

References 18 publications

Investigation on Potential-Induced Degradation in a 50 MWp Crystalline Silicon Photovoltaic Power Plant

Investigation on Potential-Induced Degradation in a 50 MWp Crystalline Silicon Photovoltaic Power Plant

Elucidating potential‐induced degradation in bifacial PERC silicon photovoltaic modules

Potential induced degradation of n‐type crystalline silicon solar cells with p+ front junction

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Potential induced degradation of n‐type crystalline silicon solar cells with p⁺ front junction