>750 mV open circuit voltage measured on 50 μm thick silicon heterojunction solar cell

Abstract

This paper presents experimental evidence that silicon solar cells can achieve >750 mV open circuit voltage at 1 Sun illumination providing very good surface passivation is present. 753 mV local open circuit voltage was measured on a 50 μm thick non-metalized silicon heterojunction solar cell. The paper also considers a recombination model at open circuit based on the recent Auger and radiative recombination parameterization and the measured surface saturation current density. The loss mechanisms at open circuit and several practical pathways to achieve >760 mV open circuit voltage in silicon heterojunction solar cells are discussed.

Effectively Transparent Front Contacts for Optoelectronic Devices

“…Fabrication of heterojunction with intrinsic thin layer (HIT) solar cells has been detailed in ref. [ 27 ] . For our measurements, contacts to HIT cells were fabricated with only 18 nm thin ITO layer to ensure high optical transmission while providing good electrical contact to amorphous silicon.…”

Improved hetero-interface passivation by microcrystalline silicon oxide emitter in silicon heterojunction solar cells

“…As can be seen, by increasing the deposition time of n-lc-SiO x :H layer, V oc improves significantly from 379 to 586 mV. It should be considered that V oc values are mainly influenced by the heterointerface passivation quality in SHJ solar cells [3,5,6,36]. As the s eff results in Fig.…”

“…Since the open circuit voltage (V oc ) is highly dependent on the interface passivation, the key factor to achieve high efficient SHJ solar cells is the good passivation at heterointerface [3][4][5]. Recently, in order to improve the heterointerface passivation, hydrogenated microcrystalline silicon (lc-Si:H) layers have been introduced to replace the conventional hydrogenated amorphous silicon (a-Si:H) emitter layers in SHJ solar cells [6][7][8][9].…”

Annealing induced amorphous/crystalline silicon interface passivation by hydrogen atom diffusion

“…As the large area silicon based solar cells with the highest efficiency to date, silicon heterojunction solar cells with intrinsic thin film (HIT) attracted a lot of investigation [1][2][3][4][5][6][7]. With superior interface passivation and wide bandgap of amorphous silicon, amorphous/crystalline silicon solar cells could achieve higher open-voltage (V oc ), which levels up the short-circuit current density (J sc ) and fill-factor (FF), even similar to traditional monocrystalline silicon solar cells, thus achieving a higher efficiency (25.6 %) [1].…”