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Polyphenylcarbosilane as a novel preceramic polymer for SiC was synthesized from thermal

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The hydrothermal hot pressing (HHP) technique is a method by which hard solid bodies of powders can be produced in a short time and at a relatively low temperature under saturated vapor pressure. In this study, the hydrothermal hot pressing (HHP) technique is used for preparing porous hydroxyapatite/TCP block having a high mechanical strength. The SEM result of the sample shows that all the pores are interconnected from 200µm to 300µm in sizes. The observed X-ray powder diffraction pattern of the sample after sintering at 1200oC is composed of hydroxyapatite and tricalciumphosphste.

In our study, the dielectric properties of SiOC low k thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. A SiOC low k thin film was fabricated onto a n-type silicon wafer by dip coating using 30wt % polyphenylcarbosilane in cyclohexane. Curing of the film was performed in air at 300°C for 2h. The thickness of the film ranges from 1 μm to 1.7 μm. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and shows a dielectric constant as low as 3.26 without porosity added. The SiOC low k thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology.

Recently, variety of organic and inorganic hybrid materials have recently investigated as alternative routes to SiOC, SiO 2 thin film formation at low temperatures for applications in electronic ceramics. Specially, silicon based polymers, such as polycarbosilane, polysilane and polysilazane derivatives have been studied for use in electronic ceramics and have been applied as dielectric or insulating materials. In this study, Polycarbosilane(PCS), which Si-CH 2-Si bonds build up the backbone of the polymer, has been investigated as low-k materials using a solution process. After heat treatment at 350 o C under N 2 atmosphere, chemical composition and dielectric constant of the thin film were SiO 0.27 C 1.94 and 1.2, respectively. Mechanical property measured using nanoindentor shows 1.37 GPa.