Preparation and Characterization of Low k Thin Film using a Preceramic Polymer

Abstract

Recently, variety of organic and inorganic hybrid materials have recently investigated as alternative routes to SiOC, SiO 2 thin film formation at low temperatures for applications in electronic ceramics. Specially, silicon based polymers, such as polycarbosilane, polysilane and polysilazane derivatives have been studied for use in electronic ceramics and have been applied as dielectric or insulating materials. In this study, Polycarbosilane(PCS), which Si-CH 2-Si bonds build up the backbone of the polymer, has been investigated as low-k materials using a solution process. After heat treatment at 350 o C under N 2 atmosphere, chemical composition and dielectric constant of the thin film were SiO 0.27 C 1.94 and 1.2, respectively. Mechanical property measured using nanoindentor shows 1.37 GPa.

Solvent Vapor Annealing Effects in Contact Resistances of Zone-cast Benzothienobenzothiophene (C8-BTBT) Transistors

“…5,6) The solution process is cost effective because it does not require a vacuum or high temperature system; this allows simplified fabrication procedures compared to the conventional microfabrication process, which is based on vacuum technology. 7,8) Therefore, soluble organic materials have a strength in the realization of flexible electronic devices such as displays, thin-film transistors (TFTs), solar cells etc. Among the various solution processes, zone-casting 9,10,11) allows the fabrication of well-ordered organic thin films; zone-casting, due to the use of a specialized flat nozzle and a mobile substrate carrier, is more beneficial for large-area device fabrication than are other solution techniques such as inkjet printing, drop casting, 12) or spin coating.…”

Flexural Strength of Polysiloxane-Derived Strontium-Doped SiOC Ceramics

“…ilicon oxycarbide ceramics, in which silicon, oxygen, and carbon are incorporated into an amorphous network structure, have attracted increasing attention, especially for processing ceramic foams, [1][2][3][4][5][6][7][8] coatings, and thin films for functional parts, [9][10][11] and synthesizing nano-sized SiC particles 12) and cost-effective long fibers, 13,14) due to their improved mechanical and chemical properties compared to amorphous SiO 2 . 15,16) However, because of the excessively large shrinkage and weight loss during the pyrolysis and densification of these ceramics, it is difficult to prepare dense, monolithic SiOC ceramics.…”

“…17) The filler-free SiOC ceramics developed and reported in the literature are mostly either porous or thin films. 4,8,10) There are limited studies on the flexural strength of dense, monolithic SiOC ceramics. Renlund and Prochazka 18) reported an average flexural strength of 385 ± 227 MPa in SiOC ceramics prepared by the pyrolysis of commercially available polysiloxane.…”

Preparation of Si(Al)ON Precursor Using Organoaluminum Imine and Poly (Phenyl Carbosilane), and the Compositional Change of the Film with Different Heat Treatment Condition

“…In the existing studies, poly (phenyl carbosilane) (PPCS) as a carbosilane-based polymer has been synthesized, and features of the films formed through a pyrolysis process have been affirmed. [12][13][14] In the present study, Si(Al)ON polymer precursors with addition of a small amount of aluminum(Al) by using imine-based organoaluminum and liquid-phase PPCS as starting materials were prepared, and compositional changes were ascertained in Si-Al-O-N formed from the precursors as a function of pyrolysis conditions.…”