Preparation of Nano Structured SiOC Thin Film for Low k Application

Kwon, Woo Teck; Lee, J.H.; Kim, Soo Ryong; Kim, H.T.; Kim, Hyung Sun; Yu, Y.H.; Kim, Young Hee

doi:10.4028/www.scientific.net/jnanor.11.85

Cited by 6 publications

(5 citation statements)

References 3 publications

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“…However, by keeping an orientation upright (u) position, for which the energy barrier for H 2 drift is only 1 meV, hydrogen may drift over the graphene surface rather than stay on one binding site, even at a low temperature. Indeed, we observed that hydrogen molecules were floating around on a graphene surface and on a nanotube, even at 20 K, through our first-principle molecular dynamics simulations [36].…”

Section: Hydrogen Adsorption On Perfect Graphenementioning

confidence: 85%

Hydrogen Adsorption on sp$^2$-Bonded Carbon Structures: Ab-initio Study

Kwon¹

2010

J. Korean Phy. Soc.

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Using ab-initio density functional theory, we investigate both molecular and atomic hydrogen adsorption properties for sp 2-bonded carbon materials, such as graphene, fullerenes, and nanotubes, and their modified structures. Weak molecular hydrogen binding depends on different binding sites and hydrogen orientations. The energy barrier of the drift motion of a hydrogen molecule on the surface of graphitic materials is estimated to be small. We find that some modifications of the sp 2bonding characters of graphitic materials, resulting from structural deformation or chemical doping, tend to enhance molecular hydrogen binding, and thus may increase the desorption temperature. Atomic hydrogen binds chemically or relatively strongly to the host carbon materials, resulting in a local modification of sp 2 carbon to sp 3 carbon. However, such strong atomic bonds easily breaks in the presence of unbound atomic hydrogen to form more favorable molecular hydrogen.

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Section: Hydrogen Adsorption On Perfect Graphenementioning

confidence: 85%

Hydrogen Adsorption on sp$^2$-Bonded Carbon Structures: Ab-initio Study

Kwon¹

2010

J. Korean Phy. Soc.

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“…Furthermore, the dielectric constant of the fired PPCS film is attributed to chemical structure, such as Si-C, C-C, C5C and C-H bonds. 10 From these results, it is observed that firing leads to increased recombination between the Si-O due to the breakdown of Si-C bonds in PPCS films. The silicon dioxide film derived from PPCS formed a good surface roughness on the silicon wafer without porosity.…”

Section: Resultsmentioning

confidence: 88%

“…Polyphenylcarbosilane, in which Si–C bonds build the backbone of the polymer, is expected to have a low dielectric constant, since the polarisability of Si–O bond is higher than that of Si–C bond. Furthermore, the dielectric constant of the fired PPCS film is attributed to chemical structure, such as Si–C, C–C, C = C and C–H bonds 10…”

Section: Resultsmentioning

confidence: 99%

Mechanical and dielectric properties of silicon dioxide film fabricated from polyphenylcarbosilane

Jung

Lee

Kim

et al. 2011

Advances in Applied Ceramics

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Silicon dioxide film derived from polyphenylcarbosilane (PPCS) is being investigated for electronic ceramics and applications to dielectric materials. Polyphenylcarbosilane was heat treated under oxygen atmosphere to fabricate SiO 2 film. The mechanical property and dielectric constant of the film were measured using a nanoindenter and a semiconductor parameter analyser with metal-insulator-semiconductor structure. The chemical behaviour and structure were analysed with an X-ray photoelectron spectrometer and a differential thermal analyser. From the results, the silicon oxide film was synthesised from PPCS due to proper heat treatment. Elastic modulus values of the fired PPCS film were from 8?9 to 27?9 GPa and hardness values of the fired PPCS film were from 0?47 to 2?29 GPa with increasing firing temperature. Change in mechanical properties is related to intermolecular binding strength in the film.

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“…1a) is one of the carbosilane polymers containing phenyl groups. It has been studied as a SiOC precursor that is applied in dust prevention films on graphite [21,22], low dielectric films [23,24], anti-corrosion film on metals [25,26] and gas separation films [27,28]. PPCS can also be used as a carbon rich ceramic precursor because of the phenyl group in its structure.…”

Section: Introductionmentioning

confidence: 99%

Step-Growth Polymerization of Poly(phenylcarbosilane) and Its Structural and Physical Properties

Lee

Kim

et al. 2011

J Inorg Organomet Polym

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The polymerization and molecular weight distribution of poly(phenylcarbosilane) (PPCS) depend on the temperature and pressure conditions under which it is synthesized using the Kumada rearrangement reaction. Its degree of polymerization is related not only to its physical properties such as solubility and boiling point but also to its chemical structure. In this study, soluble PPCS having a weight-average molecular weight (Mw) in the range of 2,500-3,000 was selectively isolated through distillation or fractional precipitation, and its chemical structure and physical properties were studied via FT-IR, NMR, GPC, and thermal analysis. The analytical data indicate that the Si-CH 2 -Si backbone and Si-Si bond are formed through step-growth polymerization and are clearly detected after purification. The differences in the thermal behavior of PPCS in air and in nitrogen were also investigated.

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Preparation of Nano Structured SiOC Thin Film for Low k Application

Cited by 6 publications

References 3 publications

Hydrogen Adsorption on sp$^2$-Bonded Carbon Structures: Ab-initio Study

Hydrogen Adsorption on sp$^2$-Bonded Carbon Structures: Ab-initio Study

Mechanical and dielectric properties of silicon dioxide film fabricated from polyphenylcarbosilane

Step-Growth Polymerization of Poly(phenylcarbosilane) and Its Structural and Physical Properties

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