Thermal desorption and Fourier transform infrared spectroscopies were used to study plasma-enhanced chemical vapor deposited SiO films from tetraethylorthosilicate. Significant water desorption and concomitant structural changes were observed for the films during subsequent heat treatments between 100 and 700°C. The films exhibited three distinct water desorption states. The desorption temperatures were approximately 100-200°C for the first state, 150-300°C for the second state, and 350-650°C for the third state. Air exposure experiments revealed that the first and second states resulted from absorbed water and the third state from constitution water. The first and second desorption states were confirmed to originate from liquid like water and water molecules hydrogen-bonded to Si-OH bonds at macropore sites in the films, respectively. The third desorption state was found to result from Si-OH bonds formed during the film growth. This desorption of constitution water was considered to be accompanied by a microstructural change of the films.
Toward the 45-nm technology node, multilevel C u dual-damascene interconnects with hybrid-structure low-k ILDs consisting of porous MSQ (k<1.6-1.8) and organic polymer films are successfully integrated on 300-mm wafers for the first time with a low-pressure CMP and dummy pattern technology, which supports the poor mechanical properties of ultra low-k films.
IntroductionLow-k dielectrics have been extensively investigated as materials that can reduce the parasitic capacitance of ULSI interconnects. Porous low-k materials are thought to he the most promising for 45-65-nm technology nodes. Ultra low-k materials (k
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