Thermal desorption and Fourier transform infrared spectroscopies were used to study plasma-enhanced chemical vapor deposited SiO films from tetraethylorthosilicate. Significant water desorption and concomitant structural changes were observed for the films during subsequent heat treatments between 100 and 700°C. The films exhibited three distinct water desorption states. The desorption temperatures were approximately 100-200°C for the first state, 150-300°C for the second state, and 350-650°C for the third state. Air exposure experiments revealed that the first and second states resulted from absorbed water and the third state from constitution water. The first and second desorption states were confirmed to originate from liquid like water and water molecules hydrogen-bonded to Si-OH bonds at macropore sites in the films, respectively. The third desorption state was found to result from Si-OH bonds formed during the film growth. This desorption of constitution water was considered to be accompanied by a microstructural change of the films.
Electrical properties of Ge-rich SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) structures fabricated by Ge condensation process have been studied. The SGOI and GOI structures for Ge composition, xGe, larger than 0.4 exhibit p-type conduction. The hole density is found to rapidly increase from 1016 to 1018 cm-3 with an increase in xGe during the Ge condensation and to decrease down to low-1017 cm-3 when xGe reaches unity. Analyses of scanning spreading resistance microscopy have directly revealed that the SGOI and GOI structures are highly conductive along the crosshatched slip bands formed during the condensation, meaning that the holes are induced along the slip bands in SGOI and GOI films. As a result, it is concluded that the hole induced during the Ge condensation is strongly associated with the slip band formation.
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