Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)

Usuda, Koji; Numata, T.; Irisawa, Toshifumi; Hirashita, N.; Takagi, Shinichi

doi:10.1016/j.mseb.2005.08.062

Cited by 99 publications

(67 citation statements)

References 4 publications

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“…Several approaches have proved successful, such as convergent beam [6] or nanobeam electron diffraction [7,8], and imaging based on diffraction contrast [9], inline holography [10], or holographic interferometry [11]. Strain maps can also be extracted from atomic-resolution images using peak-finding techniques [12,13,14], or geometric phase analysis (GPA) [15,16,17,18].…”

Section: Introductionmentioning

confidence: 99%

Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy

Couillard

Radtke

Botton

2013

Philosophical Magazine

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/npsi/ctrl?lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?lang=fr Access and use of this website and the material on it are subject to the Terms and Conditions set forth at http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://dx.doi.org/10. 1080/14786435.2013.778428 Philosophical Magazine, 93, 10-12, pp. 1250Magazine, 93, 10-12, pp. -1267Magazine, 93, 10-12, pp. , 2013 Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy Couillard, Martin; Radtke, Guillaume; Botton, Gianluigi A. Strain fields around grain boundary dislocations are measured by applying geometric phase analysis on atomic-resolution images obtained from multiple fast acquisitions in scanning transmission electron microscopy. Maps of lattice distortions in silicon introduced by an array of pure edge dislocations located at a 9(122) grain boundary are compared with the predictions from isotropic elastic theory, and the atomic structure of dislocation cores is deduced from images displaying all the atomic columns. For strain measurements, reducing the acquisition time is found to significantly decrease the effects of instabilities on the high-resolution images.Contributions from scanning artefacts are also diminished by summing multiple images following a cross-correlation alignment procedure. Combined with the sub-Ångström resolution obtained with an aberration corrector, and the stable dedicated microscope's environment, the rapid-acquisition method provides measurements of atomic displacements with an accuracy below 10 pm. Finally, advantages of combining strain measurements with the collection of various analytical signals in a scanning transmission electron microscope are discussed.

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Section: Introductionmentioning

confidence: 99%

Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy

Couillard

Radtke

Botton

2013

Philosophical Magazine

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“…Convergent-beam electron diffraction [12][13][14] and nanobeam diffraction 15 can be used to measure strain accurately at specific points on the sample but are less suited for the mapping of strains continuously across devices. More recently, aberration-corrected high-resolution transmission electron microscopy ͑HRTEM͒ 16 has been used to map strains in p-MOSFET devices.…”

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confidence: 99%

Strain mapping of tensiley strained silicon transistors with embedded Si1−yCy source and drain by dark-field holography

Hüe

Hÿtch

Houdellier

et al. 2009

Applied Physics Letters

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Dark-field holography, a new transmission electron microscopy technique for mapping strain distributions at the nanoscale, is used to characterize strained-silicon n-type transistors with a channel width of 65 nm. The strain in the channel region, which enhances electron mobilities, is engineered by recessed Si0.99C0.01 source and drain stressors. The strain distribution is measured across an array of five transistors over a total area of 1.6 μm wide. The longitudinal tensile strain reaches a maximum of 0.58%±0.02% under the gate oxide. Theoretical strain maps obtained by finite element method agree well with the experimental results.

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“…The strain distribution was measured by the nano-beam electron diffraction [9] using a JEOL electron microscope at an electron energy of 120 keV. Cross-sectional TEM specimens were prepared by mechanical polishing followed by Ar ion milling at an acceleration voltage of 3.3 kV.…”

Section: Methodsmentioning

confidence: 99%

Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation

Jin

Nakahara

Saitoh

et al. 2012

Journal of Crystal Growth

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Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)

Cited by 99 publications

References 4 publications

Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy

Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy

Strain mapping of tensiley strained silicon transistors with embedded Si1−yCy source and drain by dark-field holography

Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation

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