Thermal Desorption and Infrared Studies of Plasma-Enhanced Chemical Vapor Deposited SiO Films with Tetraethylorthosilicate

Abstract

Thermal desorption and Fourier transform infrared spectroscopies were used to study plasma-enhanced chemical vapor deposited SiO films from tetraethylorthosilicate. Significant water desorption and concomitant structural changes were observed for the films during subsequent heat treatments between 100 and 700°C. The films exhibited three distinct water desorption states. The desorption temperatures were approximately 100-200°C for the first state, 150-300°C for the second state, and 350-650°C for the third state. Air exposure experiments revealed that the first and second states resulted from absorbed water and the third state from constitution water. The first and second desorption states were confirmed to originate from liquid like water and water molecules hydrogen-bonded to Si-OH bonds at macropore sites in the films, respectively. The third desorption state was found to result from Si-OH bonds formed during the film growth. This desorption of constitution water was considered to be accompanied by a microstructural change of the films.

Characterization of Sol-Gel-Derived and Crystallized HfO2, ZrO2, ZrO2-Y2O3 Thin Films on Si(001) Wafers with High Dielectric Constant

“…Figure 8 shows examples of (a) a nonsymmetrical TPD curve indicated by the solid line (the first-order reaction) and (b) a symmetrical TPD curve indicated by the dashed line (the second-order reaction) as a function of temperature. The arrow on the nonsymmetrical TPD curve corresponds to the evolution of physisorbed and chemisorbed H 2 O, which is specified to be a liquid such as water and water molecules hydrogen-bonded to Si-OH bonds at nanopore sites in the films (Hirashita et al, 1993).…”

“…For chemical-vapor-deposited SiO 2 films, three distinct H 2 O desorption states have been defined (Hirashita et al, 1993). They are physisorbed H 2 O evolved at temperatures between 100 and 200 °C and chemisorbed H 2 O evolved at temperatures between 150 and 300 °C in a TPD measurement.…”

“…Characterization of Sol-Gel-Derived and Crystallized HfO 2 , ZrO 2 , ZrO 2 -Y 2 O 3 Thin Films on Si(001) Wafers with High Dielectric Constant 337 they were classified into three groups on the basis of the TPD results for SiO 2 formed by chemical vapor deposition (Hirashita et al, 1993): , small peaks (small protrusions) between 100 and 200 °C; , major peaks between 200 and 350 °C; and , small sharp peaks at approximately 410 °C for the samples fired at 350 and 450 °C. The measured TPD curve of H 2 O had the main peak at a temperature of 260 o C with an unsymmetrical shape, providing evidence that several desorbed components were present during heating.…”

Control of Crystallographic Orientation and Structural Characteristics for Electrodeposited Aluminum

“…1. [36][37][38][39] The morphology of the samples was observed using a scanning electron microscope (SEM, KEYENCE VE-8800) with an accelerating voltage of 20 kV. The X-ray diffraction (XRD) data at room temperature were taken for all samples using CuK¡ radiation.…”

Ultraviolet Irradiation Hardening of Hafnia Films Prepared by Sol-Gel Processes

“…21) The structural properties of silica films prepared by chemical vapor deposi tion (CVD) and solgel techniques have been investigated by TPD. 22)30) These studies revealed that the silica films con tained different organic components depending on the fabri cation processes and starting materials used such as tetra ethoxysilane. The results also suggest that TPD can be applied to analyze the formation processes of solgelderived metal oxide films.…”