A low-temperature direct wafer bonding technique has been researched by using plasma treatment. Si-to-Si direct bonding strength was 1.6 MPa by using plasma pretreatment prior to the heating and weighting. 1.4 MPa of InP/Si bonding strength was obtained by improving chemical cleaning process. On the other hand, photoluminescence properties of GaInAs/InP quantum wells bonded on Si substrate were investigated. An introduction of a 30-nm-thick superlattice buffer on the top of the wafer greatly suppressed photoluminescence intensity degradation near the bonded interface.
Surface activated bonding (SAB) technology was investigated to realize InP-based active photonic devices on a silicon-on-insulator (SOI) substrate for highly compact photonic integrated circuits (PICs). A wide area five-quantum-wells (5QWs) GaInAsP/InP membrane structure was successfully bonded onto an SOI waveguide using a low-temperature (150 °C) N2 plasma SAB method. The full width at half maximum (FWHM) of the photoluminescence (PL) of the 5QWs membrane structure on SOI was comparable to that of conventional QWs. It was revealed that the PL intensity distribution and peak wavelength shift of the GaInAsP 5QWs structure around the Si waveguides were small.
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