Low-pressure CMP for reliable porous low-k/Cu integration

Low Dielectric Constant Materials

“…Here the stack experiences high mechanical forces and the top of the ILD is exposed to the CMP slurry. While the former poses potential problems to the various interfaces in the form of adhesive failure or even physical damage to the ILD through cohesive failure, − the latter can chemically damage the ILD and adversely impact the dielectric properties . Careful selection of CMP slurries and minimizing the down force of the CMP process can mitigate these problems.…”

Low‐kMaterials: Recent Advances

“…Next, copper is deposited into the patterned dualdamascene structure and the Cu overburden including the bilayer hardmask is polished back to the ILD using chemical mechanical polishing (CMP). Here, high mechanical forces and the chemical nature of the CMP slurry may adversely affect the stack in the form of adhesive failure at the various interfaces, cohesive failure of the ILD [50][51][52] and adversely impacting the electrical properties [53] (see Figure 1.3 (i) ). Proper selection of the CMP slurries in addition to low down-force CMP processes can significantly mitigate these problems.…”

Preparation of porous ultra low k films using different sacrificial porogen precursors for 28nM technological node

“…This is because that the plasma process makes the PULK film surface become densification and introduce the silanol specie into the PULK film, which increases the dielectric constant value of the PULK film. Recently, some references have reported that the PULK film damages are caused by the dry etching/ashing [14,15], wet cleaning [16], PVD (Physical Vapor Deposition) [17] and CMP (Chemical mechanical polisher) [18,19]. The above mentioned damages not only cause the carbon loss of the PULK film but also make the PULK film performance convert from hydrophobe to hydrophilization.…”