Preparation of porous ultra low k films using different sacrificial porogen precursors for 28nM technological node

Zhou, Ming; Zhang, Beichao

doi:10.1016/j.mssp.2015.01.029

Cited by 7 publications

(4 citation statements)

References 23 publications

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“…The porogen precursor is organic molecule with sufficient volatility. Unsaturated cyclic hydrocarbons like terpinenes or norbornenes, linear alkenes, or molecules with strained rings like cycloalkene oxides or butadiene monoxide are the commonly used porogen precursors [11,28].…”

Section: Pecvd Technologymentioning

confidence: 99%

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Cheng¹,

Lee²

2020

Nanofluid Flow in Porous Media

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To provide high speed, low dynamic power dissipation, and low cross-talk noise for microelectronic circuits, low-dielectric-constant (low-k) materials are required as the inter-and intra-level dielectric (ILD) insulator of the back-end-of-line interconnects. Porous low-k materials have low-polarizability chemical compositions and the introducing porosity in the film. Integration of porous low-k materials into microelectronic circuits, however, poses a number of challenges because the composition and porosity affected the resistance to damage during integration processing and reduced the mechanical strength, thereby degrading the properties and reliability. These issues arising from porous low-k materials are the subject of the present chapter.

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Section: Pecvd Technologymentioning

confidence: 99%

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Cheng¹,

Lee²

2020

Nanofluid Flow in Porous Media

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“…To meet this goal, the introduction of porosity in the low-k SiCOH materials is required because air can provide the minimum k value of ~1.0. The produced low-k material is a so-called porous SiCOH dielectric, which can be fabricated either by the structural or the subtractive method [25][26][27]. The latter method is widely accepted because the produced film is more thermally stable and can provide Table 1.…”

Section: Low-k Materialsmentioning

confidence: 99%

Plasma Damage on Low-k Dielectric Materials

Cheng¹,

Lee²,

Haung³

2019

Plasma Science and Technology - Basic Fundamentals and Modern Applications

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Low dielectric constant (low-k) materials as an interconnecting insulator in integrated circuits are essential for resistance-capacitance (RC) time delay reduction. Plasma technology is widely used for the fabrication of the interconnects, such as dielectric etching, resisting ashing or stripping, barrier metal deposition, and surface treatment. During these processes, low-k dielectric materials may be exposed to the plasma environments. The generated reactive species from the plasma react with the low-k dielectric materials. The reaction involves physical and chemical effects, causing degradations for lowk dielectric materials. This is called "plasma damage" on low-k dielectric materials. Therefore, this chapter is an attempt to provide an overview of plasma damage on the low-k dielectric materials.

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“…For example, the growth of porous ultra-low- k SiOCH has been achieved using diethoxymethylsilane as a network-forming matrix precursor and α-terpinene as a sacrificial porogen. As-deposited films are subsequently annealed at temperatures near 385 °C for 2–4 h in broad-band UV light (200–400 nm) to remove the porogen leaving a porous SiOCH scaffold . Another related and highly effective strategy for inducing porosity in inorganic solids is through the wet chemical combination and subsequent thermal processing of inorganic precursors and organic pore formers.…”

Section: Introductionmentioning

confidence: 99%

“…As-deposited films are subsequently annealed at temperatures near 385 °C for 2−4 h in broad-band UV light (200−400 nm) to remove the porogen leaving a porous SiOCH scaffold. 32 Another related and highly effective strategy for inducing porosity in inorganic solids is through the wet chemical combination and subsequent thermal processing of inorganic precursors and organic pore formers. Examples include the use of ionic or nonionic surfactants to template mesoporous solids.…”

Section: ■ Introductionmentioning

confidence: 99%

Comprehensive Study of the Chemical, Physical, and Structural Evolution of Molecular Layer Deposited Alucone Films during Thermal Processing

et al. 2023

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Thermal processing of molecular layer deposited (MLD) hybrid inorganic−organic alucone thin films produced porous and low-k materials. Alucone films were deposited by MLD using trimethyl aluminum and ethylene glycol at 120 °C. Changes in the film density and thickness during annealing were monitored using in-situ X-ray reflectivity and were compared to atomic layer deposited (ALD) alumina films. The chemical evolution of the as-deposited and annealed alucone films during post-deposition heating with and without UV was probed using infrared spectroscopy, Rutherford backscattering, nuclear reaction analysis, and 15 N spectroscopy, providing a detailed understanding of the induced changes. The concentration of OH groups decreased after depositing 1 nm of alumina capping layer as a barrier to moisture uptake, which also decreased the etch rate in CF 4 /O 2 plasma. The lowest dielectric constant of the processed alucone films (k min = 4.75) was 25% lower than the lowest values measured in ALD alumina counterparts (k min = 6.7). Large thickness decreases for alucone films were observed at ∼200 °C of anneal temperatures. Removal of retained organic components by thermal processing of MLD films is demonstrated to be a promising and versatile route to porous thin films for a wide range of applications including low dielectric constant materials.

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Preparation of porous ultra low k films using different sacrificial porogen precursors for 28nM technological node

Cited by 7 publications

References 23 publications

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Plasma Damage on Low-k Dielectric Materials

Comprehensive Study of the Chemical, Physical, and Structural Evolution of Molecular Layer Deposited Alucone Films during Thermal Processing

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