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A gallium nitride (GaN) junction barrier Schottky (JBS) diode with trenched p-GaN region on a GaN substrate is presented. A threshold voltage of the GaN JBS diode is 0.8 V that is the same as a conventional GaN Schottky barrier diode (SBD). A specific differential on-resistance of the GaN JBS diode is 1.5 mΩ · cm 2 up to 4.5 V, above which it decreases with 0.9 mΩ · cm 2. A forward current of the GaN JBS diode at 10 V is 8.7 kA / cm 2 that is twice as the GaN SBD. A breakdown voltage of the GaN JBS diode is 1.6 kV that is larger than that of the GaN SBD. The breakdown voltage of the GaN JBS diode with the specific differential on-resistance of 0.9 mΩ · cm 2 is the highest value in the reported GaN vertical Schottky barrier diode so far.

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Barrier-height and well-width dependence of photoluminescence from AlGaN-based quantum well structures for deep-UV emitters

Kajitani

Kawasaki

Takeuchi

2007

Materials Science and Engineering: B

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Ryo Kajitani

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A High Current Operation in a 1.6 kV GaN-based Trenched Junction Barrier Schottky (JBS) Diode

Barrier-height and well-width dependence of photoluminescence from AlGaN-based quantum well structures for deep-UV emitters

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Ryo Kajitani

1.7 kV/1.0 mΩcm2normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure

Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD

Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD

GaN-based semiconductor devices for future power switching systems

Vertical GaN-based power devices on bulk GaN substrates for future power switching systems

High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates

A High Current Operation in a 1.6 kV GaN-based Trenched Junction Barrier Schottky (JBS) Diode

Barrier-height and well-width dependence of photoluminescence from AlGaN-based quantum well structures for deep-UV emitters

Contact Info

Product

Resources

About

1.7 kV/1.0 mΩcm²normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure