Vertical GaN-based power devices on bulk GaN substrates for future power switching systems

Sugiyama, Daisuke; Kajitani, Ryo; Handa, Hiroyuki; Shiozaki, Nanako; Ujita, Shinji; Ogawa, Masahiro; Tanaka, Kenichiro; Tamura, Shinichi; Hatsuda, Tetsuo; Ishida, M.; Ueda, T.

doi:10.1117/12.2287297

Cited by 9 publications

(10 citation statements)

References 7 publications

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“…Thicker DW in SBDs with 30 μm DLs results in larger VBD. Figure 15 shows the plot of V BD vs. DLT for the state-of-the-art reported vertical SBDs [63][64][65][66][67][68]. Saitoh et al realized a V BD of 1100 V for the SBDs with DLT of 5 µm after using a field plate (FP) [63].…”

Section: Breakdown Voltage Of Sbdmentioning

confidence: 99%

“…Saitoh et al realized a V BD of 1100 V for the SBDs with DLT of 5 µm after using a field plate (FP) [63]. Shibata, D. et al has reported the use of junction barrier Schottky (JBS) with p-type termination on SBDs with 13 µm thick DL to measure a V BD value of 1600 V [64]. The improvement in V BD was reported to be due to the reduction of CCD in the MOCVD grown GaN DLs [43,58].…”

Section: Breakdown Voltage Of Sbdmentioning

confidence: 99%

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Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Sandupatla

Arulkumaran

et al. 2020

Micromachines

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Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 1014/cm3) on low threading dislocation density (3.1 × 106/cm2) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current (IR) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of −2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (−20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at −750 V.

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Section: Breakdown Voltage Of Sbdmentioning

confidence: 99%

Section: Breakdown Voltage Of Sbdmentioning

confidence: 99%

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Sandupatla

Arulkumaran

et al. 2020

Micromachines

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“…Some of the main features and benefits of GaN devices have reported in the literature [57][58][59][60][61][62][63][64], are reviewed and mentioned below:…”

Section: Complexity In Usementioning

confidence: 99%

Recent Advance and Future Progress of GaN Power Semiconductor Devices Used in PV Module Integrated Converters

Rodríguez-Benítez¹,

Silva²,

Hernández-González³

et al. 2018

Preprint

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Power semiconductor devices are essential from the operation point of view, size, efficiency and cost, these components are used in a myriad of applications, providing features that make them an important part of the system in which they are operating. This document analyzes and compares the basic structure, properties, design aspects, as well as temperature performance, stability and switching losses, present in devices on silicon (Si), silicon carbide (SiC) and new generation devices fabricated in gallium nitride (GaN) applied in renewable energy systems. The main objective is determinate the viability of the new generation components, which present a superior performance in view of an increase in efficiency, conductivity, decreases in switching losses, lower resistances and parasitic capacitances as well as higher operating frequency range. Therefore demonstrating the GaN components are a strong and viable candidate to solve some of the problems present in renewable energy systems.

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“…In addition, vertical devices can potentially hold larger voltages by increasing their drift-layer thickness, thus enabling more devices per wafer. 13) Progress in growth and fabrication technology in the past years has led to the demonstration of high-performance GaN-on-GaN trench-gate MOSFETs, [14][15][16][17][18][19][20] VD-MOSFETs, 21) as well as vertical FinFETs. 22,23) In addition, quasi-and fully-vertical GaN-on-Si MOSFETs with promising figures of merit have been recently demonstrated, [24][25][26] thus combining the advantageous characteristics of GaN with the low-cost of Si substrates.…”

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confidence: 99%

“…A deep isolation mesa effectively increases the distance between the Schottky drain and the source and thus improves the V RB . Finally, the RB-MOSFET was benchmarked against other GaN vertical MOSFETs fabricated on bulk GaN, sapphire and on Si substrates [14][15][16][17][18][19][20][22][23][24][25][26][39][40][41] as shown in Fig. 5(a).…”

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confidence: 99%

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Khadar¹,

Floriduz²,

Liu³

et al. 2021

Appl. Phys. Express

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We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 μm thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, resulting in a RB voltage of ∼300 V while preserving the ON-resistance (R on,sp). Schottky contacts on etched i-GaN surface were realized through an optimized fabrication process based on tetramethylammonium hydroxide treatments. The fabricated RB-MOSFET had a low R on,sp of 4.75 mΩ cm2, current density of ∼0.9 kA cm−2 and a forward blocking voltage of 570 V.

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Vertical GaN-based power devices on bulk GaN substrates for future power switching systems

Cited by 9 publications

References 7 publications

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Recent Advance and Future Progress of GaN Power Semiconductor Devices Used in PV Module Integrated Converters

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

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