Barrier-height and well-width dependence of photoluminescence from AlGaN-based quantum well structures for deep-UV emitters

Kajitani, Ryo; Kawasaki, Koji; Takeuchi, Misaichi

doi:10.1016/j.mseb.2007.02.006

Cited by 13 publications

(5 citation statements)

References 31 publications

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“…We mentioned without forward a small peak (P1) cause luminescence from other layer in the PL result. 14) There is not only short wavelength region but also long wavelength. We guess that such multi wavelength is originated from localized multi structure of AlInGaN active layer.…”

Section: Resultsmentioning

confidence: 99%

Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy

Lee

Jeon

Jung

et al. 2012

Jpn. J. Appl. Phys.

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In this paper, we approached a novel fabrication for non phosphor white light emitting diodes (LEDs) by the growth of AlGaN/InAlGaN doublehetero structures using by mixed-source hydride vapor phase epitaxy (HVPE) system with multi-sliding boat. It is unique crystal growth technology different from conventional HVPE and metal organic chemical vapor deposition (MOCVD) system using mixed metal source of aluminum, indium and gallium. The characterization of non phosphor white LEDs was examined by photoluminescence (PL) and electroluminescence (EL). The results of EL were found green and yellow emissions as spectrum peaks near 500, 550, and 610 nm definitely. The CIE chromaticity coordinates of white LEDs was measured at injection current 30 mA. Our results are nearly positions; at x ¼ 0:28 and y ¼ 0:31. Even though the LED needs more improved in optical properties, we demonstrated achieving phosphor-free solid-state white lighting.

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Section: Resultsmentioning

confidence: 99%

Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy

Lee

Jeon

Jung

et al. 2012

Jpn. J. Appl. Phys.

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“…The values used in the calculation of the internal polarization field are given elsewhere. 15) In Fig. 4(b), the shift in peak PL energy due to the bandgap renormalization effect is given by 16,17)…”

Section: Resultsmentioning

confidence: 99%

Excitation-Density Dependence of Photoluminescence from Si-Doped AlGaN/AlGaN Multiple Quantum Wells at Low Temperature

Kajitani

Takeuchi

Aoyagi

2008

jjap

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To investigate the effect of Si doping on Al x Ga 1Àx N/Al y Ga 1Ày N multiple quantum wells (MQWs), photoluminescence (PL) measurements of Al 0:15 Ga 0:85 N/Al 0:20 Ga 0:80 N MQWs with an undoped Al 0:20 Ga 0:80 N barrier layer (undoped MQWs) and with a Si-doped layer (Si-doped MQWs) are compared in weak (1:8 Â 10 À4 to 5:2 Â 10 À3 W/cm 2 ) and strong (360 to 1:28 Â 10 4 W/cm 2 ) optical excitation ranges at 10 K. Based on the results of PL measurement, the carrier injection into the undoped MQWs induced by light illumination in the strong optical excitation range and that into the Si-doped Al 0:15 Ga 0:85 N/ Al 0:20 Ga 0:80 N MQWs in the weak optical excitation range show an increase in the PL intensity and PL peak energy, and a narrowing of the full width at half maximum (FWHM) of the PL peak. Although the internal polarization fields of the undoped and Si-doped MQWs are screened in the strong optical excitation range, the PL intensity of the undoped MQWs is higher than that of the Si-doped MQWs. The difference in the PL intensity is attributed to the formation of a nonradiative center due to Si doping.

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“…Carrier localization 11, 12 and quantum‐confined Stark effect (QCSE) 13 are the key issues in affecting the quantum efficiency of AlGaN‐based UV LEDs (even though QCSE is strongly diminished in narrow QWs). A detailed study of these phenomena is important for further development of UV LEDs, side by side with studies of carrier tunneling out of the wells comprising the LED active region 14, their recombination outside the active region 15–17, screening of the localization potential fluctuations, thermally assisted current transport along the threading dislocations 18, and Auger recombination 19, 20.…”

Section: Introductionmentioning

confidence: 82%

Photoluminescence dynamics of AlGaN quantum wells with built‐in electric fields and localized states

Mickevičius

Kuokštis

Liuolia

et al. 2010

Physica Status Solidi (a)

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We report on photoluminescence (PL) studies of AlGaN/AlGaN multiple quantum well (MQW) structures with well widths spanning from 1.65 to 5.0 nm under various excitations and temperatures. The samples were fabricated by migration‐enhanced metal‐organic chemical vapor deposition technique (MEMOCVD®). Screening of the built‐in electric field by photogenerated carriers reduced quantum‐confined Stark effect (QCSE). This is confirmed by solving the Poisson and Schrodinger equations for AlGaN‐based quantum wells (QWs) under study. Analysis of the PL internal quantum efficiency under different excitations in MQWs with different widths shows strong influence of the carrier localization on the radiative properties of MQWs.

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Barrier-height and well-width dependence of photoluminescence from AlGaN-based quantum well structures for deep-UV emitters

Cited by 13 publications

References 31 publications

Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy

Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy

Excitation-Density Dependence of Photoluminescence from Si-Doped AlGaN/AlGaN Multiple Quantum Wells at Low Temperature

Photoluminescence dynamics of AlGaN quantum wells with built‐in electric fields and localized states

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