Photoluminescence dynamics of AlGaN quantum wells with built‐in electric fields and localized states

Mickevičius, J.; Kuokštis, E.; Liuolia, Vytautas; Тамулайтис, Г.; Shur, M. S.; Yang, Jinwei; Gaška, R.

doi:10.1002/pssa.200925227

Cited by 9 publications

(4 citation statements)

References 25 publications

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“…Under the combined influence of density and oscillator strength, the peak intensity of the FX luminescence obviously exceeds that of the BX luminescence for our MQWs samples. It is worth noting that the above analysis about the Bohr radius neglected the quantum-confined Stark effect (QCSE), because the large band offset and narrow well width in our samples will result in a high energy level above the triangular potential wells, meaning that the QCSE is very weak 30 .…”

mentioning

confidence: 99%

Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers

Qin

et al. 2015

Sci Rep

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Free exciton (FX) and bound exciton (BX) in Al0.5Ga0.5N/Al0.35Ga0.65N multiple quantum wells (MQWs) with different Si-doping levels in the well layers are investigated by photoluminescence (PL) spectra. Low temperature (10 K) PL spectra identify a large binding energy of 87.4 meV for the BX in undoped sample, and 63.6 meV for the BX in Si-doped (2 × 1018 cm−3) sample. They are attributed to O-bound and Si-bound excitons, respectively. The large binding energies of BX are assumed to originate from the strong quantum confinement in the quantum wells, which also leads to a stronger FX PL peak intensity in comparison with BX at 10 K. Si-doping is found to suppress the FX quenching by reducing threading dislocation density (TDD) in the well layers, leading to a significant improvement of IQE from 33.7% to 45%.

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mentioning

confidence: 99%

Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers

Qin

et al. 2015

Sci Rep

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“…However, some of these parameters are measured indirectly or with insufficient accuracy. The inaccuracy in material parameters might be claimed to be responsible for discrepancy between theory and experiment: the field experimentally estimated in AlGaN heterostructures is smaller than the corresponding calculated values [59,60].…”

Section: Quantum Confined Stark Effectmentioning

confidence: 85%

Ultraviolet light emitting diodes

Тамулайтис¹

2011

Lith. J. Phys.

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The paper presents a review of the recent development of III-nitride based deep UV light emitting diodes (LEDs). Main applications of the deep UV LEDs are introduced. Review of material issues is focused on the lattice mismatch between the substrate and the active layer and at heterojunctions in multiple quantum well structures forming the active layer, the localization of nonequilibrium carriers, the material properties limiting the internal quantum efficiency, and the effect of efficiency droop at high density of nonequilibrium carriers. AlGaN is currently the semiconductor of choice for development of deep UV LEDs, so this material is the most discussed one in this review, though some information on AlInGaN is also provided.

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“…The efficiency droop has also been observed in AlGaN materials used for the UV LEDs [10][11][12]. In this report, we study the droop behavior in high-Al-content AlGaN/AlGaN MQW structures.…”

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confidence: 80%

Efficiency droop in high‐Al‐content AlGaN/AlGaN quantum wells

Тамулайтис

Mickevičius

Kazlauskas

et al. 2011

Phys. Status Solidi C

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Excitation power density dependence of photoluminescence (PL) efficiency is studied in the temperature range from 8 to 300 K for AlGaN multiple quantum well structures containing quantum wells of different width. PL efficiency droop is observed and dependence of the droop effect on the well width and lattice temperature is discussed. Photoluminescence band shape reveals strong carrier heating. It is shown that the heating effect has a substantial influence on the photoluminescence efficiency droop, especially at low lattice temperatures. Fitting of the temperature dependence of the PL band width with that obtained by the Monte Carlo simulation of carrier (exciton) hopping via localized states shows that (i) the potential fluctuations can be fairly accurately described using a double‐scaled potential profile model, (ii) the localization becomes stronger in narrower quantum wells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Photoluminescence dynamics of AlGaN quantum wells with built‐in electric fields and localized states

Cited by 9 publications

References 25 publications

Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers

Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers

Ultraviolet light emitting diodes

Efficiency droop in high‐Al‐content AlGaN/AlGaN quantum wells

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