1.7 kV/1.0 mΩcm<sup>2</sup>normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure

Sugiyama, Daisuke; Kajitani, Ryo; Ogawa, Masahiro; Tanaka, Kenichiro; Tamura, Shinichi; Hatsuda, Tetsuo; Ishida, M.; Ueda, T.

doi:10.1109/iedm.2016.7838385

Cited by 125 publications

(124 citation statements)

References 5 publications

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“…Fig. 5 shows the performance of our vertical trench gate MOSFETs on silicon substrates benchmarked against state-of-the-art E-mode vertical transistors on sapphire and GaN substrates [7], [12]- [20] …”

Section: Resultsmentioning

confidence: 99%

“…In addition, vertical MOSFETs can display normally-off operation, which is an important feature for power switching applications [5]- [7]. Rapid progress has been reported for high-performance vertical GaN transistors grown on n-type GaN substrates [8]- [20], mainly attributed to the capability of growing thick drift layers and the flexibility to form electrodes on the top and bottom of the devices. However, the high cost and availability of only small-size bulk GaN substrates limit their use for mass production.…”

Section: Introductionmentioning

confidence: 99%

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GaN-on-Si Quasi-Vertical Power MOSFETs

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

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Abstract-We demonstrate the first GaN vertical transistor on silicon, based on a 6.7-μm-thick n-p-n heterostructure grown on 6-inch silicon substrate by metal organic chemical vapor deposition (MOCVD). The devices consist of trench-gate quasi-vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) with a 4 μm-thick drift layer, exhibiting enhancement-mode (E-mode) operation with a threshold voltage of 6.3 V and an on/off ratio of over 10 8 . A high off-state breakdown voltage of 645 V along with a specific on-resistance of 6.8 mΩ•cm 2 were achieved thanks to the high-quality 4 μm-thick GaN drift layer presenting a relatively low defect density and very high electron mobility (720 cm 2 /V•s). This excellent performance represents a major step towards the realization of high-performance GaN vertical power transistors on low-cost silicon substrates.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

GaN-on-Si Quasi-Vertical Power MOSFETs

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

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“…The most crucial issue of device process is the local conductivity control to reduce size in devices. Shibata et al demonstrated the well‐designed vertical GaN power device with the low specific on‐resistance of 1.0 mΩ · cm 2 at the breakdown voltage of 1.7 kV with the use of the regrowth process . Although this device with the unique gate structure exhibits the superior potential of GaN devices exceeding the theoretical limit of the silicon carbide (SiC), there are remain challenges in the cost and the productivity of the regrowth process.…”

Section: Introductionmentioning

confidence: 99%

Cathodoluminescence Study on Thermal Recovery Process of Mg‐Ion Implanted N‐Polar GaN

Kataoka

Narita

Iguchi

et al. 2017

Physica Status Solidi (b)

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Thermal recovery of N‐polar GaN(000true1¯) samples implanted with magnesium and hydrogen ions was investigated by cathodoluminescence (CL) spectroscopy. The high thermal stability of N‐polar GaN allowed annealing process over 1200 °C without protective overlayer. The CL emissions from acceptor‐bound excitons and donor‐bound excitons were observed in the near‐band‐edge (NBE) after annealing over 1000 °C of the ion implanted samples, which indicates the formation of Mg acceptors. The emission intensities both in the NBE and in the green luminescence (GL) band increased with the annealing temperature, resulting from reducing the non‐radiative recombination centers. On the other hand, the enhancement of the GL band (nitrogen vacancy complexes) by prolonging the annealing duration above 1200 °C was not significant as compared to the band‐edge emission, probably resulting from the enhancement of activating the implanted Mg ions. These results give clear directions to improve the quality of Mg‐ion implanted GaN.

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“…As compared to lateral GaN HFETs, vertical GaN‐based FETs for power switching applications provide significant merits: Reduced wafer “foot print” and lower area‐specific ON‐state resistance down to ≈1.0 mΩ · cm 2 , reduced dispersion (dynamic R on ) and switching losses, enhanced thermal dissipation using bulk GaN material for uniform heat generation and heat spreading. In addition, progress in the development of low defect density GaN substrates and the possibility of strain‐free homoepitaxy allows growing thick n ‐GaN drift layers for an off‐state blocking capability larger than 1 kV . Furthermore it is predicted to support a true avalanche breakdown capability realizing the GaN material limit …”

Section: Introductionmentioning

confidence: 99%

“…Several prominent concepts for vertical GaN transistors are considered: Current Aperture Vertical Electron Transistors (CAVETs), Regrown Semipolar channel and p ‐type gate structure, Trench‐gate MOSFET, and Vertical FinFETs . A particular challenge of the first two concepts is the epitaxial regrowth and limited blocking capability.…”

Section: Introductionmentioning

confidence: 99%

GaN‐Based Vertical n‐Channel MISFETs on Free Standing Ammonothermal GaN Substrates

Bahat‐Treidel

Hilt

Stöver

et al. 2018

Physica Status Solidi (a)

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In this work, a vertical n-channel MISFET homoepitaxially grown on ammonothermal n-type GaN substrates by MOVPE is demonstrated. The MIS gate module consists of plasma enhanced atomic layer deposition of Al 2 O 3 combined with in-situ NH 3 plasma surface pre-treatment. An annealing step performed at 350 C in N 2 ambient drastically improves device performance. It reduces the ON-state resistance from %12.0 k Ω mm to %150 Ω mm, increases the ON-OFF ratio from 10 6 to 10 8 , and lifts up I ds_max from % 0.25 to % 40 mA mm À1 . The threshold voltage is above þ5 V and the median vertical off-state blocking voltage strength is %68 V μm À1 . Accumulated C-V characterization of planar MIS-capacitors on n-GaN gives insight to mechanisms boosting device performance after annealing.

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1.7 kV/1.0 mΩcm²normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure

Cited by 125 publications

References 5 publications

GaN-on-Si Quasi-Vertical Power MOSFETs

GaN-on-Si Quasi-Vertical Power MOSFETs

Cathodoluminescence Study on Thermal Recovery Process of Mg‐Ion Implanted N‐Polar GaN

GaN‐Based Vertical n‐Channel MISFETs on Free Standing Ammonothermal GaN Substrates

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1.7 kV/1.0 mΩcm2normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure

Cited by 125 publications

References 5 publications

GaN-on-Si Quasi-Vertical Power MOSFETs

GaN-on-Si Quasi-Vertical Power MOSFETs

Cathodoluminescence Study on Thermal Recovery Process of Mg‐Ion Implanted N‐Polar GaN

GaN‐Based Vertical n‐Channel MISFETs on Free Standing Ammonothermal GaN Substrates

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1.7 kV/1.0 mΩcm²normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure