GaN-based semiconductor devices for future power switching systems

Ishida, Hideyuki; Kajitani, Ryo; Kinoshita, Yusuke; Umeda, Hidekazu; Ujita, Shinji; Ogawa, Masahiro; Tanaka, Kenichiro; Morita, Tatsuo; Tamura, Shinichi; Ishida, M.; Ueda, T.

doi:10.1109/iedm.2016.7838460

Cited by 18 publications

(19 citation statements)

References 10 publications

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“…[62][63][64][65] Wide bandgap devices can potentially replace silicon technology currently facing challenges to sustain Moore's law due to its limitations in heat dissipation, power consumption, switching speed, high voltage, and high temperature. GaN can potentially operate at high voltage, high frequency, and high temperature.…”

Section: The Iii-nitrides For High Power Electronics and Rf Applicationsmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. The III-Nitrides, typically composed of GaN and its alloys with Al and In, are compound semiconductor materials with superior properties and well developed growth techniques 1 that has enabled their use in a board range of applications. The III-Nitrides have a hexagonal wurtzite structure and a continuous alloy system with tunable direct bandgaps from 6.2 eV (AlN) through 3.4 eV (GaN) to 0.7 eV (InN) 2 ( Figure 1). This wide coverage of direct bandgap range from deepultraviolet (UV) to infrared region promises a variety of applications in optoelectronics, such as light-emitting diodes (LEDs), lasers, photodetectors and solar cells. GaN is recognized with high breakdown field, high thermal conductivity, and high electron mobility, making GaN an excellent candidate for high power and RF electronic devices. III-Nitrides exhibit high Seebeck coefficient and excellent temperature stability for high temperature thermoelectric applications. Doped GaN exhibit other unique properties with associated applications; such as transition and rare-earth metals doped GaN with magnetic properties, and indium (In)/gadolinium (Gd)/boron (B)/and lithium (Li) doped GaN for nuclear detection. The ability to access such a wide spectral region and these numerous applications has traditionally required the use of many different III-V materials and complex device structures before the advent of the III-Nitrides. [3][4][5][6][7][8][9] This paper will review various applications of III-Nitrides in including LEDs, solar cells, power and RF electronics, magnetic properties, thermoelectrics and nuclear detection applications, along with their development history, current state of art and future explorations. The III-Nitrides for Light-Emitting DiodesLight-Emitting Diodes are a type of solid state lighting (SSL) source with compact size, high energy efficiency and long lifetime. High brightness LEDs have various application in traffic lights, automobile brake ligh...

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Section: The Iii-nitrides For High Power Electronics and Rf Applicationsmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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“…Schematic cross-sections of the AlGaN/AlN/GaN/AlGaN/GaN DC-HEMT structure with silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and 4H-SiC are shown in Figure. 2.For more details about working principles and advantages of HEMT with the help of band diagrams can be found in (Cornigli, et al, 2015;Ishida, et al, 2016;Zhang, et al, 2016;Koller, et al, 2017;Hashizume, et al, 2018;Kim, et al, 2018;Qi, et al, 2018). The dimensions of the structures are as follows: 1 µm of gate length, 1µm of gate width, source-gate spacing Lsg = 1µm, gate-drain spacing Lgd = 1µm, 1 µm of source length, 1 µm of drain length, 2 µm of SiC silicon carbide polymorphs substrate thickness, 0.5 µm of GaN undoped minor channel and buffer layer thickness, 21 nm of AlGaN undoped back barrier layer thickness, 14 nm of GaN undoped major channel thickness, 2 nm of Al0.3Ga0.7N thickness and, 1 nm of AlN undoped spacer layer thickness, 12 nm of doped carrier supplier layer thickness, 3nm of undoped cap layer thickness and 5.1 eV of gate Schottky contact work function.…”

Section: Device Structurementioning

confidence: 99%

“…In the recent years, a lot of research work has been carried out to study the GaN HEMTs including the optimization of GaN-based HEMT devices and integration (Stoffels, et al, 2015;Zhang, et al, 2016;Wang, et al, 2017;Hashizume, et al, 2018;Kim, et al, 2018), the enhancement of reliability (Koller, et al, 2017;Meneghini, et al, 2017;Qi, et al, 2018), the comprehensive device modeling (Raciti, et al, 2014;Radhakrishna, et al, 2015;Cornigli, et al, 2015) and the commercialization designs (Di Cioccio, et al, 2015;Then, et al, 2015;Ishida, et al, 2016;Lidow, et al, 2016). In addition, the development works have been conducted and reported on microwave noise performance of GaN HEMT.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs

Sabaghi

2019

HOLOS

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AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and 4H-SiC on the performances of AlGaN/GaN double quantum well HEMTs (DQW-HEMTs) are analyzed and investigated. The results show that the devices with 4H-SiC and 6H-SiC substrates exhibit a higher transconductance of about 192 ms/mm at VDS = 15 V and a lower minimum noise figure (NFmin) of 0.48 and 0.42 dB at 10 GHz than those of devices with 3C-SiC, respectively. Whereas, DC-HEMT with 3C-SiC substrate has a transconductance of about 180 ms/mm at VDS = 15 V and a minimum noise figure of 3.01 dB at 10 GHz. On the other hands, the DC-HEMT with 3C-SiC substrate has lower drain gate capacitance (Cdg) and higher cutoff frequency (ft) than DC-HEMT with 4H-SiC and 6H-SiC substrates. The results demonstrate that AlGaN/GaN DH-HEMTs 4H-SiC and 6H-SiC substrates are promising devices for future highpower and high-frequency electron device applications.

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“…GaN-based HEMTs on silicon substrate are particularly appealing to the IC industry due to its compatibility with the industry-matured Si-CMOS IC technologies. Tremendous research and development work has been conducted and reported in the recent years with significant progresses on GaN-on-Si HEMTs covering the full scope of a new IC-chain, including the industrial acceptable-low defect quality of GaN-on-Si epitaxial materials, the optimized GaN-based HEMT devices and integration [11][12][13][14][15][16][17], the significantly enhanced reliability [18][19][20][21][22][23][24], the comprehensive circuit and device modeling [25][26][27] and the product designs [19,[28][29][30][31][32][33][34].…”

Section: Introductionmentioning

confidence: 99%

“…Besides the hybrid approach with GaN HV-HEMT and Si LV-MOSFET in a cascade configuration, AlGaN/GaN-on-Si HEMTs with direct GaN gate control [40,41] have attracted much attention commercially in the recent years due to its size thus cost. GaN-on-Si is acknowledged as a promising device platform for further exploration of commercial high-power modules with higher power density [4,9,33,34]. Moreover, owing to the availability of both depletion-mode and enhancement-mode of GaN HEMTs, they have invoked research interests and efforts in the IC industry for complementary logic applications [9,31].…”

Section: Introductionmentioning

confidence: 99%

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

et al. 2018

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GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

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GaN-based semiconductor devices for future power switching systems

Cited by 18 publications

References 10 publications

Review—The Current and Emerging Applications of the III-Nitrides

Review—The Current and Emerging Applications of the III-Nitrides

Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

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