A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Zeng, Fanming; An, Jia; Zhou, Guangnan; Li, Wenmao; Wang, Hui; Duan, Tianli; Jiang, Lingli; Yu, Hongyu

doi:10.3390/electronics7120377

Cited by 127 publications

(65 citation statements)

References 157 publications

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“…GaN‐high electron mobility transistor (HEMT) is an optimal device for designing microwave high‐power circuits . It is mainly due to the outstanding properties of GaN material such as wide band gap, high electron mobility, high thermal conductivity, and high electron velocity.…”

Section: Introductionmentioning

confidence: 99%

On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates

Jarndal

Arivazhagan

Nirmal

2020

Int J RF Microw Comput Aided Eng

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In this article, threading dislocations and its impact on the electrical and thermal performance of GaN-on-Diamond (Dia), -SiC, and -Si high electron mobility transistor (HEMT) has been investigated. TCAD simulation of GaN-HEMT is performed with various buffer traps to mimic the lattice mismatch/dislocation density at GaN/Si, GaN/SiC, and GaN/Dia interface. It has been found that, the dislocations not only induce traps, but also degrade the thermal conductivity of the GaN-buffer. This accordingly could deteriorate the thermal characteristic of GaN-on-Dia, which has higher lattice mismatch with respect to GaN-on-SiC. This investigation showed that the growth process of GaN-on-Dia should be optimized in order to reduce the threading dislocations. This accordingly could dramatically further improve its outstanding thermal characteristics with respect to GaN-on-SiC and GaN-on-Si devices. K E Y W O R D S diamond and silicon carbide, GaN, HEMT, silicon, substrate

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Section: Introductionmentioning

confidence: 99%

On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates

Jarndal

Arivazhagan

Nirmal

2020

Int J RF Microw Comput Aided Eng

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“…Gallium nitride (GaN)-based high electron mobility transistor (HEMT) has become an attractive candidate for high power applications, due to integrating lots of outstanding physical properties like high breakdown voltage, high frequency application and low on-resistance [1][2][3]. For power devices, the property of high breakdown voltage is particularly significant.…”

Section: Introductionmentioning

confidence: 99%

Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

et al. 2019

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A 2-D simulation of off-state breakdown voltage (VBD) for AlGaN/GaN high electron mobility transistors (HEMTs) with multi field-plates (FPs) is presented in this paper. The effect of geometrical variables of FP and insulator layer on electric field distribution and VBD are investigated systematically. The FPs can modulate the potential lines and distribution of an electric field, and the insulator layer would influence the modulation effect of FPs. In addition, we designed a structure of HEMT which simultaneously contains gate FP, source FP and drain FP. It is found that the VBD of AlGaN/GaN HEMTs can be improved greatly with the corporation of gate FP, source FP and drain FP. We achieved the highest VBD in the HEMT contained with three FPs by optimizing the structural parameters including length of FPs, thickness of FPs, and insulator layer. For HEMT with three FPs, FP-S alleviates the concentration of the electric field more effectively. When the length of the source FP is 24 μm and the insulator thickness between the FP-S and the AlGaN surface is 1950 nm, corresponding to the average electric field of about 3 MV/cm at the channel, VBD reaches 2200 V. More importantly, the 2D simulation model is based on a real HMET device and will provide guidance for the design of a practical device.

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“…As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress in speed and integration density [1]. The major issues, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become worse as the size of the silicon-based metal oxide semiconductor field effect transistors (MOSFETs) decreased to nanometers while the device integration density increased.…”

Section: Introductionmentioning

confidence: 99%