On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates

Abstract

In this article, threading dislocations and its impact on the electrical and thermal performance of GaN-on-Diamond (Dia), -SiC, and -Si high electron mobility transistor (HEMT) has been investigated. TCAD simulation of GaN-HEMT is performed with various buffer traps to mimic the lattice mismatch/dislocation density at GaN/Si, GaN/SiC, and GaN/Dia interface. It has been found that, the dislocations not only induce traps, but also degrade the thermal conductivity of the GaN-buffer. This accordingly could deteriorate the thermal characteristic of GaN-on-Dia, which has higher lattice mismatch with respect to GaN-on-SiC. This investigation showed that the growth process of GaN-on-Dia should be optimized in order to reduce the threading dislocations. This accordingly could dramatically further improve its outstanding thermal characteristics with respect to GaN-on-SiC and GaN-on-Si devices. K E Y W O R D S diamond and silicon carbide, GaN, HEMT, silicon, substrate

Genetic algorithm initialized artificial neural network based temperature dependent small‐signal modeling technique for GaN high electron mobility transistors

“…Nevertheless, better integration capability of GaN HEMT on Si‐substrate is very appealing 6 . In addition, GaN‐on‐Si HEMT is cost effective when compared to GaN HEMT on SiC and diamond even though GaN HEMT on Si possesses relatively lower resistivity and thermal conductivity leading to substrate‐loading and self‐heating effects 7,8 . The self‐heating in addition to the ambient temperature have strong impact on the small‐ and large‐signal characteristics as well as reliability of GaN HEMTs and the associated circuits 9 .…”

2‐mm‐gate‐periphery GaN high electron mobility transistor s on SiC and Si substrates: A comparative analysis from a small‐signal standpoint

“…Each substrate has its own advantages and disadvantages in term of cost, integration capability, resistivity, lattice matching, and thermal conductivity. 4 SiC is widely used, since it is regarded as the most suitable substrate for GaN devices because of its low lattice mismatch with GaN and good thermal characteristics. 5 GaN-on-Dia HEMT is a recent emerging technology.…”

“…Nevertheless, the performances of the GaN-on-Dia HEMTs are significantly affected by the lattice-mismatch induced threading dislocations, which enhance buffertrapping effects. 4 The Si substrate represents an optimal solution in terms of cost and integration capability but it has a large lattice mismatch with GaN. 8 Table 1 lists dislocation densities and percentages of the lattice mismatch for the SiC, Si, and Dia substrates.…”

Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs

“…GaN‐based high‐electron‐mobility transistor (HEMT) has picked up a part of consideration in later a long time being a promising candidate for microwave applications. This can operate at extremely high frequencies, and has high breakdown efficiency with high saturation velocity of electrons 1‐3 . The GaN devices exhibit predominant power operation in relation to the more established GaAs‐based HEMT and became the innovation of choice for current and future utilizations 4‐6 .…”

“…This can operate at extremely high frequencies, and has high breakdown efficiency with high saturation velocity of electrons. [1][2][3] The GaN devices exhibit predominant power operation in relation to the more established GaAs-based HEMT and became the innovation of choice for current and future utilizations. [4][5][6] For any type of technique, radio points of interest have standards of response to be achieved with two interfering frequency domain signals spaced out that their third-order intermodulation distortion (IMD 3 ) may come down on peak of the relevant signal.…”