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This paper investigated the temperature effects on the performance of the AlGaN/GaN high electron mobility transistor (HEMT) with a 150 nm and 250 nm gate length on a SiC substrate over a temperature range of −40 to 150°C including experimental characterization, modelling and analysis by on-wafer measurements up to 50 GHz. All the DC and small signal parameter variations with ambient temperature on the same set of devices have been reported for the first time. The temperature coefficient of all the DC and small signal parameters as well as f t and f max were reported. Some of the extracted equivalent circuit parameters with the theoretical data of the evolution of electrical parameters and the relevant physical equations involved have been compared using the same biasing condition for further accuracy. The theoretical results are shown to be consistent with the extracted data. Some results are also experimentally verified with previous works cited in the paper. The results provide some valuable insights for the underlying physics of the device parameters affected by temperature.

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Thermal influence on S 22 kink behavior has been carried out on a 0.15 μm gate length AlGaN/ GaN/SiC high electron mobility transistor over a wide range of temperature. The size and the shape of the S 22 kink effect (KE) in terms of biasing and temperature have been evaluated. The main finding is that S 22 of the studied device is affected by two kinks: the first one appears at approximately 19 GHz and then the second one appears at about 43 GHz. The impact of the intrinsic circuit parameters on the S 22 kink phenomena is inspected to assess their contribution. In addition, a new procedure is proposed to quantify this type of phenomenon by defining the kink area as the area between the two curves corresponding to S 22 with and without the KE. The relevance of this study emerges from the fact that an exhaustive characterization of these anomalous phenomena can empower RF engineers to effectively take them into account for both modeling and design purposes.

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