Small signal model parameters analysis of GaN and GaAs based HEMTs over temperature for microwave applications

Alim, Mohammad Abdul; Rezazadeh, A.A.; Gaquière, C.

doi:10.1016/j.sse.2016.02.002

Cited by 38 publications

(24 citation statements)

References 27 publications

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“…The measured temperature dependence of h 21 and Z 22 is presented in Figures 10 and 11 at a constant biasing of V gs = −4.8 V and V ds = 15 V. It can be seen that the magnitude of h 21 reduces by heating the device, due to the reduction in g m. [19][20][21][22] At this fixed bias condition, the magnitude of g m decreases from 70 to 48 mS with the elevation of temperature from -40 C to 150 C. The CGP of h 21 as well as the dip in Z 22 are only slightly influenced by the temperature, consistently with the fact that the extrinsic inductances are mostly temperature insensitive and the intrinsic capacitances depend slightly on the temperature. Further investigation of the other h-parameters (h 11 , h 12 , and h 22 ) with temperature is represented in Figures 12-14 at the same bias condition.…”

Section: Analysis Of H 21 Peak and Z 22 Dip Vs Temperaturementioning

confidence: 97%

Multibias and temperature dependence of the current‐gain peak in GaN HEMT

Alim

Hasan

Rezazadeh

et al. 2020

Int J RF Microw Comput Aided Eng

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Thermal and multibias behavior of the peak in the short‐circuit current‐gain (h21) has been investigated for a GaN HEMT, aiming to contribute to an extensive knowledge on it. To obtain a simple and complete insight of this phenomenon and its influence in device performance over operating conditions, high‐frequency multibias scattering (S‐) parameter measurements have been analyzed from low to high temperature. It has been observed that the current‐gain peak might get to be more or less serious depending on the working circumstances. The peak affecting h21 has been successfully reproduced by using an equivalent‐circuit model. Moreover, a novel procedure has been developed to interpret this kind of phenomenon by quantifying the area of the current‐gain peak (ACGP), which is denoted as the area corresponding to h21 curves with and without the peak. It is found that the ACGP is strongly dependent on bias and less dependent on temperature. The relevance of a comprehensive evaluation of the peak in h21 lies in its usefulness for empowering RF engineers to efficiently consider it for both device modeling and circuit design.

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Section: Analysis Of H 21 Peak and Z 22 Dip Vs Temperaturementioning

confidence: 97%

Multibias and temperature dependence of the current‐gain peak in GaN HEMT

Alim

Hasan

Rezazadeh

et al. 2020

Int J RF Microw Comput Aided Eng

Self Cite

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“…Previous studies [14][15][16] have reported the temperature influence on the small signal parameters of GaN-on-SiC HEMTs. Alim et al 17 investigated the small signal parameters as well as their temperature-dependent behavior of two different technologies, ie, GaAs pHEMT and GaN-on-SiC HEMT, and analyzed their differences. This paper demonstrates the temperature dependence of small signal parameters of GaN-on-diamond HEMTs for the first time.…”

Section: Introductionmentioning

confidence: 99%

Temperature‐dependent small signal performance of GaN‐on‐diamond HEMTs

Zhou²,

Kong³

et al. 2019

Int J Numerical Modelling

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This paper presents the temperature dependence of small signal performance of GaN-on-diamond high electron mobility transistors (HEMTs) at an ambient temperature range from 0°C to 125°C. The temperature influence on the parasitic resistances together with the intrinsic parameters is investigated, and the temperature coefficients of these parameters are extracted from measured data. For comparison, a GaN-on-SiC device is also investigated. These results are important for the development and application of the GaN-on-diamond HEMT technology. KEYWORDSGaN-on-diamond, high electron mobility transistor (HEMT), small signal parameters, temperature dependence

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“…Alim et al in 2016 reported temperature dependent characterization of GaN HEMTs of submicron dimensions and showed varying response of the device DC and AC characteristics as a function of ambient temperature. 15,16 They showed that power handling capability of the device declines with increasing magnitude of ambient temperature. They also demonstrated that AC performance of the device is sensitive to the ambient temperature.…”

Section: Introductionmentioning

confidence: 99%

An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics

Khan

Ahmed

Rehman

2019

Int J Numerical Modelling

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In this paper, an improved temperature dependent model has been presented to predict AC characteristics of submicron AlGaN/GaN high electron mobility transistors (HEMTs). The model evaluates effects of channel temperature on the device AC intrinsic parameters. It has been shown that the rise of channel temperature is almost linear in nature, and it depends upon both the ambient temperature as well as on the operating voltages of the device. By reassessing two dimensional electron gas (2‐DEG) carrier concentration, ns, high electron mobility transistor (HEMT)'s analytical I−V equations for both linear as well as saturation regions have been modified. The modeled DC characteristics showed a good degree of accuracy with the experimental data. By evaluating temperature and bias dependent charge accumulation in the depletion region of the device, an AC model for the device intrinsic parameters has been developed. S‐parameters of the device have been evaluated by using the modeled AC intrinsic parameters that showed a good agreement with the measured data. Thus, the developed technique could be a useful tool to predict AC parameters of submicron AlGaN/GaN HEMTs meant for harsh environments.

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Small signal model parameters analysis of GaN and GaAs based HEMTs over temperature for microwave applications

Cited by 38 publications

References 27 publications

Multibias and temperature dependence of the current‐gain peak in GaN HEMT

Multibias and temperature dependence of the current‐gain peak in GaN HEMT

Temperature‐dependent small signal performance of GaN‐on‐diamond HEMTs

An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics

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