Temperature‐dependent small signal performance of GaN‐on‐diamond HEMTs

Xu, Yuehang; Zhou, Jianjun; Kong, Yuechan; Chen, Tangsheng; Zhang, Yong; Yan, Bo; Xu, Ruimin

doi:10.1002/jnm.2620

Cited by 16 publications

(11 citation statements)

References 27 publications

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“…The equivalent circuit parameters extraction is based on multibias S-parameter measurements up to 20 GHz [44], [45]. Parasitic pad capacitances and inductances were deembedded using conventional open and short patterns fabricated on the same substrate [6].…”

Section: B C-v Model Parameter Extractionmentioning

confidence: 99%

A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD

Zhou

et al. 2019

IEEE Access

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A compact large-signal model for hydrogen-terminated (C-H) diamond metal-oxide field effect transistors (MOSFETs) is presented based on an improved quasi-physical zone division (QPZD) model. Unlike the conventional QPZD model for the AlGaN/GaN high-electron-mobility transistors (HEMTs), the linear-mode current-voltage (I-V) model of the diamond FET is analytically deduced with an improved velocity-electric field relation and temperature-dependent effective hole mobility µ eff (T). The I-V model can directly demonstrate the relation between the negative V ds and the negative I ds of the p-type diamond FETs, which cannot be achieved by the conventional QPZD model. Finally, the proposed model has been verified by the on-wafer measurements of an in-house 2 × 500 µm diamond FET. The good consistency shows that the presented compact large-signal model can accurately predict the DC I-V, multibias scattering-parameters (S-parameters), and large-signal performances. The results of this paper will be useful for the microwave diamond-based transistor and circuit designs. INDEX TERMS Diamond MOSFET, zone division, thermal resistance, current-voltage model, large-signal model.

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Section: B C-v Model Parameter Extractionmentioning

confidence: 99%

A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD

Zhou

et al. 2019

IEEE Access

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“…The most evident difference between the GaAs and GaN technologies is that the former is more mature, whereas the latter is more suited for high-power applications, owing to its wide bandgap nature. Over the years, many studies have focused on the high-frequency characterization and modeling of the temperature-dependent behavior of both GaAs [3][4][5][6][7][8][9][10][11][12] and GaN [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] HEMTs. This is because the operating temperature can remarkably affect the device performance, reliability, and lifetime, which are key features in practical applications, especially those in harsh environmental conditions [28].…”

Section: Introductionmentioning

confidence: 99%

Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

et al. 2021

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The goal of this paper is to provide a comparative analysis of the thermal impact on the microwave performance of high electron-mobility transistors (HEMTs) based on GaAs and GaN technologies. To accomplish this challenging goal, the relative sensitivity of the microwave performance to changes in the ambient temperature is determined by using scattering parameter measurements and the corresponding equivalent-circuit models. The studied devices are two HEMTs with the same gate width of 200 µm but fabricated using different semiconductor materials: GaAs and GaN technologies. The investigation is performed under both cooled and heated conditions, by varying the temperature from −40 °C to 150 °C. Although the impact of the temperature strongly depends on the selected operating condition, the bias point is chosen in order to enable, as much as possible, a fair comparison between the two different technologies. As will be shown, quite similar trends are observed for the two different technologies, but the impact of the temperature is more pronounced in the GaN device.

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“…Moreover, accuracy of the models depends upon understanding the associated device physics which in turn restricts their practical application. Further except few [22][23][24][25][26] in most of the methods, selective modeling has been carried wherein few small signal parameters have been considered. Hence, it is desirable to devise a method that can handle all the aforementioned limitations and is simple to implement.…”

Section: Introductionmentioning

confidence: 99%

“…However the investigation does not consider prediction and variation of small signal parameters of different device configuration. In the works of Crupi et al, 22 Alim et al, 23 and Chen et al 24 temperature dependence of small signal parameters of GaN based HEMT on SiC and diamond has been illustrated. Recently Jardnal has reported an ANN based electro thermal model of GaN devices in Reference 25.…”

Section: Introductionmentioning

confidence: 99%

An ambient temperature dependent small signal model of GaN HEMT using method of curve fitting

Majumdar

Chatterjee²,

Chatterjee

et al. 2020

Int J RF Microw Comput Aided Eng

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In this article, ambient temperature effect on small signal model of AlGaN/ GaN HEMT has been explored. Based on the study, an analytical method to understand the ambient temperature dependence on device behavior has been developed. Effectiveness of the proposed method has been illustrated through comparison with measured data. Moreover, comparison with other analytical methods has also been carried out illustrating its acceptability threshold.

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Temperature‐dependent small signal performance of GaN‐on‐diamond HEMTs

Cited by 16 publications

References 27 publications

A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD

A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD

Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

An ambient temperature dependent small signal model of GaN HEMT using method of curve fitting

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