An ambient temperature dependent small signal model of
            <scp>GaN HEMT</scp>
            using method of curve fitting

Majumdar, Arijit; Chatterjee, Sandipan; Chatterjee, Sayan; Chaudhari, Sheli Sinha; Поддар, Д. Р.

doi:10.1002/mmce.22434

Cited by 7 publications

(4 citation statements)

References 25 publications

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“…The most evident difference between the GaAs and GaN technologies is that the former is more mature, whereas the latter is more suited for high-power applications, owing to its wide bandgap nature. Over the years, many studies have focused on the high-frequency characterization and modeling of the temperature-dependent behavior of both GaAs [3][4][5][6][7][8][9][10][11][12] and GaN [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] HEMTs. This is because the operating temperature can remarkably affect the device performance, reliability, and lifetime, which are key features in practical applications, especially those in harsh environmental conditions [28].…”

Section: Introductionmentioning

confidence: 99%

Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

et al. 2021

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The goal of this paper is to provide a comparative analysis of the thermal impact on the microwave performance of high electron-mobility transistors (HEMTs) based on GaAs and GaN technologies. To accomplish this challenging goal, the relative sensitivity of the microwave performance to changes in the ambient temperature is determined by using scattering parameter measurements and the corresponding equivalent-circuit models. The studied devices are two HEMTs with the same gate width of 200 µm but fabricated using different semiconductor materials: GaAs and GaN technologies. The investigation is performed under both cooled and heated conditions, by varying the temperature from −40 °C to 150 °C. Although the impact of the temperature strongly depends on the selected operating condition, the bias point is chosen in order to enable, as much as possible, a fair comparison between the two different technologies. As will be shown, quite similar trends are observed for the two different technologies, but the impact of the temperature is more pronounced in the GaN device.

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Section: Introductionmentioning

confidence: 99%

Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

et al. 2021

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“…It is essential to mention that small-signal modelling of this device is the foundational basis upon which large-signal model is developed and eventually the designing of PAs. There have been reports of various methods such as parameter extraction, curve-fitting to extrapolate the linear and nonlinear behaviour of GaN HEMTs [10]- [11]. But this can be quite complex and time-consuming because of complicated dynamic behaviour of such devices.…”

Section: Introductionmentioning

confidence: 99%

Demonstration of CAD Deployability for GPR Based Small-Signal Modelling of GaN HEMT

Husain

Khusro

Hashmi

et al. 2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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This paper develops and presents a CAD deployability of small-signal model of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). First, a Gaussian Process Regression (GPR), a non-parametric probability-based method, is utilized to develop a small-signal model to effectively describe the behavior of the device. The model is developed to captures the bias and frequency dependence of GaN HEMT. The performance of the model is supplemented by advanced preprocessing and tuning of the hyperparameters of GPR approach. The tuning is done using 10-fold cross-validation error loss function. To examine the model's generalization ability the Mean squared error (MSE) metrics is used for both training and testing sets. Thereafter, the developed GPR based model is incorporated into CAD environment. Then the performance of the model is evaluated for stability and is also investigated for the usefulness of the model in class-F power amplifier design. The amplifier achieves excellent maximum available gain and small-signal voltage gain.

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“…Throughout the years, many studies have been dedicated to the investigation of how the temperature impacts the performance of GaN-based HEMT devices. To this end, both electro-thermal simulations [ 1 , 2 , 3 , 4 , 5 , 6 ] and measurement-based analysis [ 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 ] have been developed. Although the electro-thermal device simulation is undoubtedly a very powerful and costless tool to deeply understand the underlying physics behind the operation of the transistor in order to improve the device fabrication, the measurement-based investigation is a step of crucial importance for achieving a reliable validation of a transistor technology prior to its use in real applications.…”

Section: Introductionmentioning

confidence: 99%

An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

2021

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Presently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and microwave characteristics of a GaN-based HEMT versus the ambient temperature using measured data, an equivalent-circuit model, and a sensitivity-based analysis. The tested device is a 0.15-μm ultra-short gate-length AlGaN/GaN HEMT with a gate width of 200 μm. The interdigitated layout of this device is based on four fingers, each with a length of 50 μm. The scattering parameters are measured from 45 MHz to 50 GHz with the ambient temperature varied from −40 °C to 150 °C. A systematic study of the temperature-dependent performance is carried out by means of a sensitivity-based analysis. The achieved findings show that by the heating the transistor, the DC and microwave performance are degraded, due to the degradation in the electron transport properties.

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An ambient temperature dependent small signal model of GaN HEMT using method of curve fitting

Cited by 7 publications

References 25 publications

Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

Demonstration of CAD Deployability for GPR Based Small-Signal Modelling of GaN HEMT

An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

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