Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

Alim, Mohammad Abdul; Chowdhury, A. Zahed; Islam, Shariful; Gaquière, C.; Crupi, Giovanni

doi:10.3390/electronics10091115

Cited by 15 publications

(11 citation statements)

References 52 publications

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“…A zero-temperature coefficient (ZTC) point of −4.5 V can be obtained, as pointed out in figure 3(a). Notably, the ZTC point is inherent in different device technologies owing to the counterbalancing of different temperature-dependent effects contributing in opposite ways [1,27,28].…”

Section: Resultsmentioning

confidence: 99%

DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures

Zeng¹,

Zhang²,

Luo³

et al. 2022

J. Phys. D: Appl. Phys.

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In this work, the device characteristics of GaN-based high-electron-mobility transistors (HEMTs) were systematically investigated by the direct current (DC) and low-frequency noise (LFN) measurements within the temperature ranging from 300 K to 4.2 K. The temperature-dependent behavior of the on- and off-state electrical properties was statistically analyzed, highlighting an overall improved device performance under the cryogenic temperatures. In addition, the LFN of the device exhibited an evident behavior of 1/f noise from 10 Hz to 10 kHz in the measured temperature range and can be well described by the carrier number fluctuations with correlated mobility fluctuations (CNF/CMF) model down to 4.2 K. Based on this model, we further extracted and discussed the defect-related behavior in the devices under low-temperature environments. These experimental results provide insights into the device characteristics of GaN-based HEMTs under cryogenic environments, motivating further studies into the GaN-based cryo-devices and systems.

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Section: Resultsmentioning

confidence: 99%

DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures

Zeng¹,

Zhang²,

Luo³

et al. 2022

J. Phys. D: Appl. Phys.

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“…In addition, when the gate-source voltage V gs is about À4.6 V, the output current is almost unaffected by the temperature at the same drainsource voltage V ds , yielding a zero-temperature coefficient (ZTC) characteristic, which is due to the temperature dependence of the device's electrical parameters contributing in the opposite way. [58][59][60] As the temperature increases, the V off shifts to a more negative value because of the effect of the donor-like trap, causing the current to increase for the same V gs . [32] Besides, the increase in temperature causes the degradation of electron mobility, resulting in a decrease in current.…”

Section: Model Verification and Analysismentioning

confidence: 99%

An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

Wu,

Yao,

Liu

et al. 2024

Physica Status Solidi (a)

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In this work, an extended temperature current–voltage (I–V) model for AlGaN/GaN high electron mobility transistors (HEMTs) is proposed. Since there is no carrier freeze‐out effect in GaN HEMTs, the current density, switching characteristics, and heat dissipation performance are significantly improved with the decrease in temperature. The threshold voltage drift phenomenon can be accurately described at various temperatures by the trapping effect control potential model. Based on Matthiessen's law, the applicable temperature range of the mobility model is further extended. At cryogenic temperatures, the saturation current, saturation velocity, and sub‐threshold swing of the device tend to saturate as well as be temperature‐independent, which can be accurately modeled by using the equivalent temperature and applying the crucial temperature to quantify the turning point. Furthermore, the SHE modeling incorporates the temperature dependence of the material's thermal conductivity. The accuracy of the model is verified by experimental data at low (4.2–300 K) and high (298–773 K) temperatures. The proposed model overcomes the limitations of existing models applied at wide ambient temperatures.

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“…As seen from the figure, the 2nd sub-band ( E 1 ) is significantly larger than E 0 . Therefore, the second sub-band’s contribution to n s can be omitted [ 19 ].…”

Section: Modeled and Extraction Data Verificationmentioning

confidence: 99%

“…The sapphire substrate, when compared to SiC and Si, exhibits exceptional self-heating effects, with an increase in gate voltage [ 14 , 15 , 16 , 17 ]. On the other hand, excessive power density increases the risk of high-power dissipation and high operation channel temperature, both of which have a detrimental effect on the performance and reliability of GaN HEMTs [ 18 , 19 , 20 , 21 , 22 , 23 ]. Consequently, it is critical to determine the thermal effects.…”

Section: Introductionmentioning

confidence: 99%

Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity

et al. 2022

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We presented an explicit empirical model of the thermal resistance of AlGaN/GaN high-electron-mobility transistors on three distinct substrates, including sapphire, SiC, and Si. This model considered both a linear and non-linear thermal resistance model of AlGaN/GaN HEMT, the thickness of the host substrate layers, and the gate length and width. The non-linear nature of channel temperature—visible at the high-power dissipation stage—along with linear dependency, was constructed within a single equation. Comparisons with the channel temperature measurement procedure (DC) and charge-control-based device modeling were performed to verify the model’s validity, and the results were in favorable agreement with the observed model data, with only a 1.5% error rate compared to the measurement data. An agile expression for the channel temperature is also important for designing power devices and monolithic microwave integrated circuits. The suggested approach provides several techniques for investigation that could otherwise be impractical or unattainable when utilizing time-consuming numerical simulations.

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Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

Cited by 15 publications

References 52 publications

DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures

DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures

An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity

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