Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity

Chakraborty, Surajit; Amir, Walid; Shin, Ju‐Won; Shin, Ki‐Yong; Cho, Chu‐Young; Kim, Jae‐Moo; Hoshi, Takayuki; Tsutsumi, Takuya; Sugiyama, Hiroki; Matsuzaki, Hiroyuki; Kwon, Hyuk-Min; Kim, Dae-Hyun; Kim, Tae-Woo

doi:10.3390/ma15238415

Cited by 8 publications

(8 citation statements)

References 56 publications

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“…[ 17 , 18 , 19 , 20 , 21 ]. In addition, recently, the comparison of linear and nonlinear thermal conductivity models for AlGaN/GaN HEMTs has demonstrated that the calculated data of the nonlinear model are in good agreement with the measured data [ 22 ].…”

Section: Resultsmentioning

confidence: 98%

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer

et al. 2023

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In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip size, as well as an Au metal heat-spreading layer deposited on top of a planarized dielectric/passivation layer above the active region. The Au bump patterns can be designed with high flexibility to provide more efficient heat dissipation from the large GaN HEMT chips to an AlN package substrate heat sink with no constraint in the alignment between the HEMT cells and the thermal conduction bumps. Steady-state thermal simulations were conducted to study the channel temperatures of GaN HEMTs with various Au bump patterns at different levels of current and voltage loadings, and the results were compared with the conventional face-up GaN die bonding on an AlN package substrate. The simulations were started from a single finger isolated HEMT cell and then extended to multiple fingers HEMT cells (total gate width > 40 mm) to investigate the “thermal cross-talk” effect from neighboring devices. Thermal analysis of the GaN HEMT under pulse operation was also performed to better reflect the actual conditions in power conversion or pulsed laser driver applications. Our analysis provides a combinational assessment of power GaN HEMT dies under a working condition (e.g., 1MHz, 25% duty cycle) with different flip chip packaging schemes. The analysis indicated that the channel temperature rise (∆T) of a HEMT cell in operation can be reduced by 44~46% by changing from face-up die bonding to a flip-chip bonding scheme with an optimized bump pattern design.

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Section: Resultsmentioning

confidence: 98%

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer

et al. 2023

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“…The channel temperatures were computed using the DC or electrical method as outlined in Reference [58] and are illustrated in Figure 6 for the device characterized by a gate length, Lg = 3 µm; source-to-drain distance, Lsd = 7 µm; and gate width, Wg = 50 µm. Across a range of gate voltages, specifically from VGS = 0 V to 2 V, the disparity in channel tem- The channel temperatures were computed using the DC or electrical method as outlined in Reference [58] and are illustrated in Figure 6 for the device characterized by a gate length, L g = 3 µm; source-to-drain distance, L sd = 7 µm; and gate width, W g = 50 µm. Across a range of gate voltages, specifically from V GS = 0 V to 2 V, the disparity in channel temperature (T ch ) remained negligible.…”

Section: Resultsmentioning

confidence: 99%

“…The reduced electric field allows the 2DEG to accumulate or populate near the interface between the GaN and AlGaN layers. The channel temperatures were computed using the DC or electrical method as outlined in Reference [58] and are illustrated in Figure 6 for the device characterized by a gate length, Lg = 3 µm; source-to-drain distance, Lsd = 7 µm; and gate width, Wg = 50 µm. Across a range of gate voltages, specifically from VGS = 0 V to 2 V, the disparity in channel tem-…”

Section: Figure 4amentioning

confidence: 99%

Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure

Chakraborty,

Kim

2023

Micromachines

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We present the mean time to failure (MTTF) of on-wafer AlGaN/GaN HEMTs under two distinct electric field stress conditions. The channel temperature (Tch) of the devices exhibits variability contingent upon the stress voltage and power dissipation, thereby influencing the long-term reliability of the devices. The accuracy of the channel temperature assumes a pivotal role in MTTF determination, a parameter measured and simulated through TCAD Silvaco device simulation. Under low electric field stress, a gradual degradation of IDSS is noted, accompanied by a negative shift in threshold voltage (ΔVT) and a substantial increase in gate leakage current (IG). Conversely, the high electric field stress condition induces a sudden decrease in IDSS without any observed shift in threshold voltage. For the low and high electric field conditions, MTTF values of 360 h and 160 h, respectively, were determined for on-wafer AlGaN/GaN HEMTs.

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“…κ GaN and κ Sub are the thermal conductivities of the buffer and substrate layers, respectively. In all the calculations, we used the measured data of GaN HEMTs grown on three different wafers, Si, SiC, and sapphire, and the temperature dependence of thermal conductivity can be depicted as [ 49,56 ]

$$\kappa \left(\right. T \left.\right) = \left(\kappa\right)_{0} \left(\left(\right.

…”

Section: Model Descriptionmentioning

confidence: 99%

An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

Wu,

Yao,

Liu

et al. 2024

Physica Status Solidi (a)

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In this work, an extended temperature current–voltage (I–V) model for AlGaN/GaN high electron mobility transistors (HEMTs) is proposed. Since there is no carrier freeze‐out effect in GaN HEMTs, the current density, switching characteristics, and heat dissipation performance are significantly improved with the decrease in temperature. The threshold voltage drift phenomenon can be accurately described at various temperatures by the trapping effect control potential model. Based on Matthiessen's law, the applicable temperature range of the mobility model is further extended. At cryogenic temperatures, the saturation current, saturation velocity, and sub‐threshold swing of the device tend to saturate as well as be temperature‐independent, which can be accurately modeled by using the equivalent temperature and applying the crucial temperature to quantify the turning point. Furthermore, the SHE modeling incorporates the temperature dependence of the material's thermal conductivity. The accuracy of the model is verified by experimental data at low (4.2–300 K) and high (298–773 K) temperatures. The proposed model overcomes the limitations of existing models applied at wide ambient temperatures.

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Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity

Cited by 8 publications

References 56 publications

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer

Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure

An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

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