In this article differential evolution based method of small signal modeling of GAN HEMT has been investigated. The method uses a unique search space exploration strategy to obtain optimized values of intrinsic and extrinsic elements pertaining to compact small signal model from extracted equivalent circuit elements and measured S-parameter data. Effectiveness of the method has been illustrated by comparing the measured S-parameter data of a 4 × 0.1 × 75 μm 2 GaN/SiC HEMT in the frequency range of 1 to 30 GHz wherein modeled and measured data are in good agreement. K E Y W O R D S differential evolution, small signal model, GaN HEMT
In this article, ambient temperature effect on small signal model of AlGaN/ GaN HEMT has been explored. Based on the study, an analytical method to understand the ambient temperature dependence on device behavior has been developed. Effectiveness of the proposed method has been illustrated through comparison with measured data. Moreover, comparison with other analytical methods has also been carried out illustrating its acceptability threshold.
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