A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD

Abstract

A compact large-signal model for hydrogen-terminated (C-H) diamond metal-oxide field effect transistors (MOSFETs) is presented based on an improved quasi-physical zone division (QPZD) model. Unlike the conventional QPZD model for the AlGaN/GaN high-electron-mobility transistors (HEMTs), the linear-mode current-voltage (I-V) model of the diamond FET is analytically deduced with an improved velocity-electric field relation and temperature-dependent effective hole mobility µ eff (T). The I-V model can directly demonstrate the relation between the negative V ds and the negative I ds of the p-type diamond FETs, which cannot be achieved by the conventional QPZD model. Finally, the proposed model has been verified by the on-wafer measurements of an in-house 2 × 500 µm diamond FET. The good consistency shows that the presented compact large-signal model can accurately predict the DC I-V, multibias scattering-parameters (S-parameters), and large-signal performances. The results of this paper will be useful for the microwave diamond-based transistor and circuit designs. INDEX TERMS Diamond MOSFET, zone division, thermal resistance, current-voltage model, large-signal model.

Microwave diamond devices technology: Field‐effect transistors and modeling

“…A quasi‐physical zone division (QPZD) model with fewer fitting parameters was also used for diamond FETs 66 . Based on the reproduction of I‐V characteristics, a compact large‐signal model for HD FETs was presented based on an improved QPZD model proposed by Fu and Xu et al 67 The current model is indispensable to compact large‐signal modeling that is deduced in the linear‐ and saturated‐operation modes. The corresponding schematic diagram of the three‐zone division method for the linear‐mode I‐V model is shown in Figure 22.…”

“…Z 1 and Z 3 are the source and drain access zones, respectively. The core current model is deduced in Z 2 , and the boundary conditions are deduced in Z 1 and Z 3 67 …”

“…Measured (symbols) and modeled (solid lines) multi‐bias S‐parameters from 0.1 to 20 GHz for the HD MOSFET 67 …”

“…Although the proposed QPZD model can accurately predict device characteristics, it still contains some empirical parameters. F I G U R E 2 5 Comparison between single-tone power sweep simulations (lines) and measurements (symbols) for HD MOSFET large-signal characteristics (P out , Gain, and PAE) at 1 GHz 67 Although promising results can be obtained by using the QPZD model, the large-signal model of HD FETs is still at an early stage compared with state-of-the-art GaN HEMT modeling. The large-signal modeling of HD FETs needs to be improved by accurate modeling of small-signal characteristics, 69 electrothermal effects, 70,71 high-order harmonics, 72 intermodulation distortion (IMD), 73 and structural parameter scalability, 74 and so on, for reality circuit design.…”

Fast and Accurate Temperature-Dependent Current Modeling of HBTs Using the Dimension Reduction Method

“…However, the accuracy and convergence of physical models need to be improved at some operation regions. Therefore, some empirical models are added in physical models, and semiphysical or semi-empirical models are used for accurate modeling [15]. In this work, a simplified AgilentHBT (AHBT) model is used for large-signal modeling.…”