2021
DOI: 10.1016/j.ijleo.2020.166202
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Performance analysis of cesium formamidinium lead mixed halide based perovskite solar cell with MoOx as hole transport material via SCAPS-1D

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Cited by 66 publications
(27 citation statements)
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“…The large absorption coefficient of the absorber layer is responsible for the gradual increment in J SC with respect to thickness . As stated in the literature, an increase in resistivity in the device due to an increase in perovskite thickness causes a reduction in FF. The lowest value for FF was roughly 62.07%.…”
Section: Resultsmentioning
confidence: 85%
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“…The large absorption coefficient of the absorber layer is responsible for the gradual increment in J SC with respect to thickness . As stated in the literature, an increase in resistivity in the device due to an increase in perovskite thickness causes a reduction in FF. The lowest value for FF was roughly 62.07%.…”
Section: Resultsmentioning
confidence: 85%
“…The SCPAS program employs the Poisson’s equation, which defines the relationship between the photocarrier and the semiconductor’s electrostatic potential, and continuity equations, which represent charge generation and recombination kinetics in materials . Solving both the Poisson’s equation and the continuity equation gives us the quantum efficiency (QE) and J – V properties . Using the Poisson’s equation and the continuity equation, it is possible to figure out the density of electrons and holes. , The distribution of the electric field E ( x ) can be calculated using the Poisson’s equation normald E normald x = ρ ε , ρ ( x ) = q ( N D + p N A n ) …”
Section: Simulation Detailsmentioning
confidence: 99%
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“…SCAPS (Burgelman et al, 2000) (a Solar Cell Capacitance Simulator) is one of the most widely used software tools for simulating solar cell device characteristics. (Verschraegen and Burgelman, 2007;Mostefaoui et al, 2015;Simya et al, 2015;AlZoubi and Moustafa, 2019;Karthick et al, 2020;Houimi et al, 2021;Jannat et al, 2021).…”
Section: Solar Cell Capacitance Simulator-1dmentioning
confidence: 99%
“…Figure 7 depicts the influence of the electrical properties of the device with variations in thickness and defects. The recombination model used in this article is known as SRH, [37] and formula for it is provided below.…”
Section: Influence Of Ch 3 Nh 3 Gei 3 Thickness Variation and Its Defect Density On Psc Devicementioning
confidence: 99%