This study focuses on the characterization of two 0.5 μm gate-length double heterojunction AlGaAs/InGaAs/GaAs pHEMTs using pre and post fabricated vertical oriented multilayer 3D monolithic microwave integrated (MMIC) circuit technology. The effects of the presence of 3D components above the active layer were accomplished by means of capacitance-voltage measurement, on-wafer DC and S-parameter measurements and two-tone intermodulation distortion measurement. The barrier height, donor concentration in the barrier layer, existing two-dimensional electron gas, output current, off and on state leakage, transconductance, cut-off frequency, small signal model parameters, gain, minimum noise figures and nonlinear distortion behavior reveals no significant performance degradation. Furthermore the fundamental device properties such as the depletion depth d, the sheet charge densities of the 2-DEG, n s , filed dependent mobility, μ, and the effective carrier velocity, v eff is not much affected due to multilayer processing. Less than 5% changes in magnitude of the device parameters are realized between the pre and post fabricated multilayer 3D MMIC technology. These effective comparisons of the both device are useful for future designs and optimizations of multilayer vertical stacked 3D MMICs.
The key objective of this study is to check out the performance of two multilayer processed double‐heterojunction pHEMTs with different gate width as well as one conventional single‐heterojunction HEMT. Different types of investigation have been undertaken by means of on‐wafer DC, small‐signal, and nonlinear two‐tone measurements. The modeling of the DC output characteristics was successfully accomplished using the FET's Curtice model for all of three tested devices. The main figures of merit for microwave and millimeter wave applications have been determined from scattering parameter measurements and then discussed in detail. Furthermore, to attain a better insight of the device behavior, the nonlinear intermodulation distortion behavior has been also studied and compared for the three devices over different bias conditions. A careful analysis of the DC and RF characteristics over a wide range of working conditions is necessary to ensure adequate transistor operation, depending on the given application of interest.
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