A High Current Operation in a 1.6 kV GaN-based Trenched Junction Barrier Schottky (JBS) Diode

Kajitani, Ryo

doi:10.7567/ssdm.2015.m-3-3

Cited by 9 publications

(7 citation statements)

References 4 publications

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“…The impact of p-sidewall damage was also conjectured and analyzed in GaN PI-MPS diodes processed using ICP-RIE [9]. In fact, the reported MPS diodes processed using ICP-RIE etching exhibited J leak ≈ 10-100 A cm −2 well before the sharp upsurge in current [4,9,10,24], a plausible signature of severe leakage from p-sidewall contribution.…”

Section: Background and Motivationmentioning

confidence: 95%

Design of PAMBE-based selective-area growth compliant ultra-low leakage GaN mixed-conduction vertical diodes for high-power applications

Sarker¹,

Kelly²,

Landi³

et al. 2021

Semicond. Sci. Technol.

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Modern high-speed power applications require diodes with high-current capacity, larger reverse blocking voltage, lower reverse recovery transients, and lower leakage. GaN mixed-conduction vertical diodes are an attractive option for these operations. Experimentally reported GaN diodes have two major shortcomings, namely, higher leakage due to non-optimum design and conventional processing methods (e.g. ion implantation and dry etching), introducing huge leakage components. In this work, we design ultra-low leakage GaN buried p-base merged p-i-n Schottky and buried p-base merged p-i-n junction barrier controlled Schottky diodes, capable of reducing leakage current by more than five orders of magnitude by virtue of strong reduced surface field effect. Moreover, these designs are fully compliant with our earlier reported silicon nitride shadowed selective-area growth (SNS-SAG) methodology, capable of reducing the leakage by at least four orders of magnitude. In combination with SNS-SAG and highly efficient dielectric vertical sidewall edge termination scheme, these designs provide attractive options for higher performance.

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Section: Background and Motivationmentioning

confidence: 95%

Design of PAMBE-based selective-area growth compliant ultra-low leakage GaN mixed-conduction vertical diodes for high-power applications

Sarker¹,

Kelly²,

Landi³

et al. 2021

Semicond. Sci. Technol.

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“…One is a JBS with selective ion implantations 39,40) and the other is a trench JBS. 41,42) In these devices, the cyclic buried p-GaN or bumped shape p-GaN regions relax the electric field under the Schottky electrode and, thus, reduce the reverse leakage currents. However, these GaN JBS diodes have technological drawbacks.…”

Section: Schottky Barrier Diodesmentioning

confidence: 99%

Recent development of vertical GaN power devices

Oka

2019

Jpn. J. Appl. Phys.

142

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Gallium nitride (GaN) is an attractive material for high-frequency and high-power devices. Due to the availability of relatively high-quality free-standing bulk GaN substrates, the research and development of vertical GaN devices on GaN substrates has made significant progress in recent years, and various transistors and diodes based on vertical GaN with excellent characteristics have been reported. This paper reviews the current status and recent progress of vertical GaN power device development reported from companies and research institutions, which includes the technological development of our recent research results of Schottky barrier diodes and trench MOSFETs. Key remaining issues for practical applications are also described.

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“…18) To overcome this problem, a vertical GaN SBD with a junction barrier Schottky (JBS) structure was fabricated by the trench etching of epitaxially grown p-GaN instead of Mg implantation. 19) As a result, the V b of the vertical GaN SBD reaches 1.6 kV, although the reverse leakage current still remains high.…”

mentioning

confidence: 98%

Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

Hayashida

Nanjo

Furukawa

et al. 2017

Appl. Phys. Express

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In this study, we successfully fabricated vertical GaN merged PiN Schottky (MPS) diodes and comparatively investigated the cyclic p-GaN width (Wp) dependence of their electrical characteristics, including turn-on voltage and reverse leakage current. The MPS diodes with Wp of more than 6 µm can turn on at around 3 V. Increasing Wp can suppress the reverse leakage current. Moreover, the vertical GaN MPS diode with the breakdown voltage of 2 kV was realized for the first time.

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A High Current Operation in a 1.6 kV GaN-based Trenched Junction Barrier Schottky (JBS) Diode

Cited by 9 publications

References 4 publications

Design of PAMBE-based selective-area growth compliant ultra-low leakage GaN mixed-conduction vertical diodes for high-power applications

Design of PAMBE-based selective-area growth compliant ultra-low leakage GaN mixed-conduction vertical diodes for high-power applications

Recent development of vertical GaN power devices

Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

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