The ON-state characteristics of a 1.7-kV 4H-SiC junction barrier Schottky diode were studied after 4.5-MeV electron irradiation. Irradiation doses were chosen to cause a light, strong, and full doping compensation of an epitaxial layer. The diodes were characterized using Deep Level Transient Spectroscopy, C-V (T), and I-V measurements without postirradiation annealing. The calibration of model parameters of a device simulator, which reflects the unique defect structure caused by the electron irradiation, was verified up to 2000 kGy. The quantitative agreement between simulation and measurement requires: 1) the Shockley-Read-Hall model with at least two deep levels on the contrary to ion irradiation and 2) a new model for enhanced mobility degradation due to radiation defects. The diode performance at high electron fluences is shown to be limited by the doping compensation at the epitaxial layer.

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Abstract-In this paper, we present a method of testing digital circuits during normal operation. The resources used to perform on-line testing are those which are inserted to alleviate the off-line testing problem. The off-line testing resources are modified such that during system operation they can also observe the normal inputs and outputs of a combinational circuit under test. The normal inputs to the circuit under test are compared with test vectors in its test set. When a normal input matches a test vector, the circuit output for such an input is typically compressed into a developing signature. When all of the test vectors in the test set have appeared as normal inputs, the signature is read and verified.With this method, the length of time required for all of the test vectors to appear, possibly in some order, among the normal inputs to the circuit under test is of considerable importance. We refer to this as the test latency and give analytical methods for its computation with verification by simulation. We also describe a hardware structure for implementing the concurrent test method and identify a number of approaches for reducing test latency.Zndex Terms-Concurrent testing, test latency, built-in-self-test, VLSI testing, testable design.

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In this article, the effect of local radiation damage on the electrical characteristics of 1700 V 4H-SiC Merged-Pin Schottky (MPS) diode have been investigated. Radiation defects introduced by irradiation with 670 keV protons were placed into the low-doped n-type epi-layer and their influence on diode characteristics were characterized by capacitance DLTS, C-V profiling and I-V measurements. Simulation model accounting for the effect of proton irradiation was developed, calibrated and used for analysis of underlying effects and temperature dependencies. Results show that the forward voltage drop and breakdown voltage is insensitive to the position of the damage region when the defect peak is placed far away from the Schottky metal contact of the MPS diode. However, when the damage region approaches to the regions, forward voltage drop degrades significantly. For fluences higher than cm , the acceptor concentration in the peak region achieves donor doping level of the epi-layer and a sharp increase in the diode forward voltage drop is observed. Acceptor centers introduced by proton irradiation also slightly increase the breakdown voltage while decreasing the leakage current at voltages close to the MPS diode breakdown ( V).

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