An electron-selective SiC /SiO  contact for Si solar cells made with fully industrial techniques

Sharma, Rupendra Kumar; Radhakrishnan, Hariharsudan Sivaramakrishnan; Tous, Loïc; Poortmans, Jef

doi:10.1016/j.solmat.2022.111637

Cited by 2 publications

(10 citation statements)

References 19 publications

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“…Despite containing a huge amount of P (2 at. %), not much difference is seen in the residual stress (for r ≥ 1.2) and the H content between the intrinsic and P-doped films for a given r value. Moreover, both P-doped and intrinsic non-blistering SRC r films were achieved with the same r value of 1.6 and higher; the big differences in the blistering severity of the r < 1.6 films could be a result of the different tools used for the blistering tests.…”

Section: Resultsmentioning

confidence: 82%

“…In our previous work with P-doped SRC2.0, we achieved a J 0 of 4 fA/ cm 2 with fully industrial processing techniques. 37 Ingenito and the co-authors reported a J 0 of 4 fA/cm 2 with their P-doped SiC x film. 22 As for passivation with N-containing Si films, Yang et al reported a J 0 value of 1.7 fA/cm 2 with an in situ P-doped SiN x film containing 15 at.…”

Section: Determination Of Excess Si Content and Crystallinity Ofmentioning

confidence: 92%

“…16 However, comparing the crystallinity of intrinsic SRC2.0 to our previous work on in situ P-doped SRC2.0, we note that P helps to significantly enhance crystallinity. 37 For example, the Si crystallinity of P-doped SRC2.0 was 76.7% compared to 64.0% for intrinsic SRC2.0 for an annealing temperature of 950 °C. Based on our experience with SRC2.0, the crystallinities of SRO1.3 and SRN0.26 are also expected to be higher with in situ P doping.…”

Section: Determination Of Excess Si Content and Crystallinity Ofmentioning

confidence: 99%

“…The crystallized silicon in the films is in the form of nanocrystals embedded in the remaining amorphous material as has been observed by others. 35,37 The presence of dopants can also affect the crystallinity of Si films. Feldmann in his study found that although P enhanced the crystallinity of in situ doped a-Si:H in comparison to undoped a-Si:H, B reduced it, for annealing temperatures between 800 and 1000 °C.…”

Section: Determination Of Excess Si Content and Crystallinity Ofmentioning

confidence: 99%

“…24 Our industrial-type bifacial devices featuring rear P-doped SRC2.0/SiO x contact suffered from a low fill factor (72.6%) because of the high ρ c (19 mΩ•cm 2 ) at the rear contact. 37 The high ρ c of these C-, N-, or O-incorporated contacts can be attributed to the limited crystallinity, and hence, the low carrier mobility in these Si films compared to that of poly-Si; low crystallinity also means less active-dopant concentration. Only Nandakumar et al with their O-containing rear poly-Si/SiO x contact obtained a high fill factor of 81% (implying low ρ c ) with a 23% efficient bifacial cell.…”

Section: Determination Of Excess Si Content and Crystallinity Ofmentioning

confidence: 99%

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Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiO_x-Based Passivating Contacts for Si Solar Cells

Sharma

Alleva

Hajjiah

et al. 2022

ACS Appl. Energy Mater.

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For application in high-efficiency silicon solar cells bearing SiO x -based passivating contacts, we have developed 100 nm thick, PECVD Si-rich amorphous films, capable of being processed in industrial furnaces without blistering, by incorporating adequate amounts of each of C, N, and O in the films during PECVD. We found that non-blistering of the films is a result of the low intrinsic stress (compressive) in the films and not due to a low H content, which, in fact, is much higher in the non-blistering films than in the C-, N-, and O-free films. Among the three types of nonblistering Si-rich amorphous films, we conclude that the Oincorporated one is the most suitable for application in SiO x -based passivating contacts owing to the film's high excess Si content and ability to crystallize.

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Section: Resultsmentioning

confidence: 82%

Section: Determination Of Excess Si Content and Crystallinity Ofmentioning

confidence: 92%

Section: Determination Of Excess Si Content and Crystallinity Ofmentioning

confidence: 99%

Section: Determination Of Excess Si Content and Crystallinity Ofmentioning

confidence: 99%

Section: Determination Of Excess Si Content and Crystallinity Ofmentioning

confidence: 99%

See 3 more Smart Citations

Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiO_x-Based Passivating Contacts for Si Solar Cells

Sharma

Alleva

Hajjiah

et al. 2022

ACS Appl. Energy Mater.

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A Review on Potential Mechanically Resistant Materials for Optical Multifunctional Surfaces: Bioinspired Surfaces with Advanced Properties

Sarieddine,

Kadiri,

Guelorget

et al. 2023

Adv Materials Inter

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Mimicking naturethrough nanostructuring allows the creation of multifunctional surfaces withremarkable properties, such as anti‐reflectivity, high optical transmittanceand controlled wettability, enabling anti‐icing or anti‐fogging behaviors. These multifunctionalsurfaces have gained significant interest in civil and military domains. However,integrating them into real‐life applications faces challenges related tocost, high‐throughput large‐scale compatible nanofabrication techniques, andtheir mechanical resistance. While sub‐wavelength patterning improves the optical performance,it often comes at the cost of compromising the mechanical resistance. As opticalperformance improves, mechanical resistance tends to deteriorate, and viceversa. To address this challenge, taking inspiration from the lotus leafstructure, where patterns are covered by a thin 2D wax film, covering thepatterns of structured surfaces with a protective layer can be a viablesolution. This protective layer should enhance the mechanical resistance of thesurface without compromising its multifunctional capabilities. This reviewhighlights the most suitable materials that can be employed as protectivecoatings and their potential to enhance the resistance of structured surfaces.The fundamental concept behind the creation of multifunctional optical surfacesis discussed, followed by a comprehensive examination of mechanical tests thatcan be utilized to characterize their mechanical behavior. This review aims topave the way for the development of durable multifunctional optical surfaces,making them more amenable to industrial applications.

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An electron-selective SiC /SiO contact for Si solar cells made with fully industrial techniques

Cited by 2 publications

References 19 publications

Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiO_x-Based Passivating Contacts for Si Solar Cells

Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiO_x-Based Passivating Contacts for Si Solar Cells

A Review on Potential Mechanically Resistant Materials for Optical Multifunctional Surfaces: Bioinspired Surfaces with Advanced Properties

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An electron-selective SiC /SiO contact for Si solar cells made with fully industrial techniques

Cited by 2 publications

References 19 publications

Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiOx-Based Passivating Contacts for Si Solar Cells

Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiOx-Based Passivating Contacts for Si Solar Cells

A Review on Potential Mechanically Resistant Materials for Optical Multifunctional Surfaces: Bioinspired Surfaces with Advanced Properties

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Product

Resources

About

Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiO_x-Based Passivating Contacts for Si Solar Cells

Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiO_x-Based Passivating Contacts for Si Solar Cells