Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode

Vobecký, J.; Hazdra, P.; Popelka, Stanislav; Sharma, Rupendra Kumar

doi:10.1109/ted.2015.2421503

Cited by 37 publications

(52 citation statements)

References 10 publications

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“…The irradiation can result in the embedding of the additional charge into the gate oxide and an increase of surface state density at the SiO 2 /SiC interface . Simultaneously, radiation defects introduced by electron irradiation can remove electrons from the low doped drift n ‐layer and degrade electron mobility .…”

Section: Resultsmentioning

confidence: 99%

“…These features are most likely given by a superposition of several peaks (defects) with close activation energies . Introduction rates of these defects are high (0.14 cm −1 for E1, 0.33 cm −1 for E2, and 0.11 cm −1 for E3 ). They form deep acceptor levels in the SiC bandgap which then compensate nitrogen shallow donors and cause carrier (electron) removal.…”

Section: Resultsmentioning

confidence: 99%

“…Removal of the charge in the drift region with increasing irradiation dose is also evidenced by decrease of the drain to source capacitance C DS . The second important effect of introduced radiation defects is the decrease of electron mobility in the drift region which significantly accelerates the increase of R DS_ON .…”

Section: Resultsmentioning

confidence: 99%

“…Measurement performed on 1700 V 4H‐SiC junction barrier Schottky (JBS) diodes (C3D10170H) subjected to electron irradiation showed that the epilayer used for this voltage class starts to be fully depleted of free carriers at irradiation doses higher than 700 kGy. It can be therefore expected that also 1700 V SiC MOSFETs will lose their functionality at this level of doses.…”

Section: Resultsmentioning

confidence: 99%

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Radiation resistance of wide-bandgap semiconductor power transistors

Hazdra

Popelka

2016

Phys. Status Solidi A

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Radiation resistance of state‐of‐the‐art commercial wide‐bandgap power transistors, 1700 V 4H‐SiC power MOSFETs and 200 V GaN HEMTs, to the total ionization dose was investigated. Transistors were irradiated with 4.5 MeV electrons with doses up to 2000 kGy. Electrical characteristics and introduced defects were characterized by current–voltage (I–V), capacitance–voltage (C–V), and deep level transient spectroscopy (DLTS) measurements. Results show that already low doses of 4.5 MeV electrons (>1 kGy) cause a significant decrease in threshold voltage of SiC MOSFETs due to embedding of the positive charge into the gate oxide. On the other hand, other parameters like the ON‐state resistance are nearly unchanged up to the dose of 20 kGy. At 200 kGy, the threshold voltage returns back close to its original value, however, the ON‐state resistance increases and transconductance is lowered. This effect is caused by radiation defects introduced into the low‐doped drift region which decrease electron concentration and mobility. GaN HEMTs exhibit significantly higher radiation resistance. They keep within the datasheet specification up to doses of 2000 kGy. Absence of dielectric layer beneath the gate and high concentration of carriers in the two dimensional electron gas channel are the reasons of higher radiation resistance of GaN HEMTs. Their degradation then occurs at much higher doses due to electron mobility degradation.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Radiation resistance of wide-bandgap semiconductor power transistors

Hazdra

Popelka

2016

Phys. Status Solidi A

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“…Various device types of 4H-SiC, such as diodes, MOSFETs, BJTs and JFETs have been tested under different radiation environments like protons, neutrons and gamma ray [11][12][13][14][15][16][17]. Among these devices BJTs are generally considered to be the most radiation hard.…”

Section: Introductionmentioning

confidence: 99%

High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits

Suvanam

Kuroki

Lanni

et al. 2017

IEEE Trans. Nucl. Sci.

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Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV

Hazdra

Vobecký

2019

Physica Status Solidi (a)

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Radiation damage produced in 4H-SiC n-epilayers by electrons of different energies is presented. Junction barrier Schottky power SiC diodes are irradiated with 1.05, 2.1, 5, and 10 MeV electrons with doses up to 600 kGy. Radiation defects are characterized by capacitance deep-level transient spectroscopy and capacitance-to-voltage (C-V) measurement. Results, which are compared with previous data obtained on 4.5 MeV electrons, show that the damage structure is very similar for all irradiation energies. Dominating is the generation of simple, thermally unstable defects evidenced by the presence of acceptor levels located at 0.25, 0.38, 0.60, and 0.72 eV below the 4H-SiC conduction band edge. With increasing energy of electrons, the number of simple defects saturates, and the production of more complex, cluster-related defects grow. Majority of introduced defects are acceptor centers, which compensate n-type (nitrogen) doping of the epilayer. The carrier removal rate increases with electron energy and follows well the classical nonionization energy loss (NIEL) scaling for electrons in silicon. The stability of introduced defects and their effect on carrier lifetime reduction are discussed, as well.

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Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode

Cited by 37 publications

References 10 publications

Radiation resistance of wide-bandgap semiconductor power transistors

Radiation resistance of wide-bandgap semiconductor power transistors

High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits

Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV

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