High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits

Suvanam, Sethu Saveda; Kuroki, Shin-Ichiro; Lanni, Luigia; Hadayati, Raheleh; Ohshima, Takeshi; Makino, Takahiro; Hallén, Anders; Zetterling, Carl-Mikael

doi:10.1109/tns.2016.2642899

Cited by 17 publications

(16 citation statements)

References 27 publications

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“…These properties mean SiC crystal has a hardness to radiation and has potential to realize an electronic device with low soft errors. Radiation-hardened SiC devices have been reported [1,12,13]. 4H-SiC BJT and MOSFETs were demonstrated at up to 3.4 MGy [12] and 1.13 MGy [13], respectively.…”

Section: Introductionmentioning

confidence: 99%

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Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor

Tsutsumi

Meguro

Takeyama

et al. 2023

IEEE Electron Device Lett.

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For radiation-hardened CMOS image sensor (CIS), 4H-SiC photosensors with active pixel sensor (APS)type circuits were developed and demonstrated. The dark current of 4H-SiC photodiodes was < 2 nA/cm 2 . The spectral sensitivity characteristics were also evaluated in the wavelength from 200 nm to 400 nm. The maximal quantum efficiency was 63% at 270 nm. The photosensors with APS type circuits showed high responses to UV light, demonstrating their operation. High gamma-ray dose experiments were also carried out. The dark current after 2 MGy (SiO2) irradiation was 25 nA/cm 2 . The photosensors with APS-type were successfully working after 2 MGy exposure.

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Section: Introductionmentioning

confidence: 99%

“…Radiation-hardened SiC devices have been reported [1,12,13]. 4H-SiC BJT and MOSFETs were demonstrated at up to 3.4 MGy [12] and 1.13 MGy [13], respectively. When 4H-SiC is used as a photodetector, ultra violet (UV) light can be accurately detected by this photo detector due to its wide bandgap.…”

Section: Introductionmentioning

confidence: 99%

Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor

Tsutsumi

Meguro

Takeyama

et al. 2023

IEEE Electron Device Lett.

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“…These properties mean SiC crystal has a hardness to radiation and has potential for electronic devices with low soft errors. Operation of 4H-SiC bipolar junction transistors (BJTs), junction field effect transistors (JFETs), and metal-oxide-semiconductor transistors (MOSFETs) have been demonstrated in high temperature environments [4][5][6][7][8][9][10][11][12][13][14]. In terms of the image sensor, 4H-SiC has already demonstrated operation as a UV imaging system with 256 pixels at 400°C [15].…”

Section: Introductionmentioning

confidence: 99%

Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors

Meguro

Takeyama

Ohshima

et al. 2022

IEEE Electron Device Lett.

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For radiation hardened image sensors, a Silicon-On-Insulator (SOI) -Si/ 4H-SiC hybrid pixel device was developed. The hybrid pixel device consists of one Si photodiode and three 4H-SiC nMOSFETs. At fabrication, SOI substrate was directly bonded on 4H-SiC substrate via SiO2. After bonding, the base silicon substrate and Buried Oxide (BOX) were removed by TMAH wet-etching. By using this SOI-Si/ 4H-SiC substrate, the SOI-Si photodiodes and 4H-SiC nMOSFETs were integrated in the same substrate. As a result, a response of the SOI-Si/ 4H-SiC hybrid pixel device to light illumination was successfully demonstrated.

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“…Silicon-carbide (SiC) is a promising semiconductor material for devices operating in high-radiation [1][2][3][4][5][6][7] and hightemperature [8][9][10][11][12][13] environments. In previous work, the authors fabricated a SiC operational amplifier (op-amp) based on 4H-SiC complementary MOS (CMOS) technology.…”

Section: Introductionmentioning

confidence: 99%

Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment

Masunaga

Crescitelli

Funaki

2020

Jpn. J. Appl. Phys.

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Long-term thermal stability of specific contact resistance (ρc) in cross-bridge kelvin resistors (CBKRs), with an Al/TiN/Ti/Ni2Si/4H-SiC layered structure was studied. In hightemperature-storage tests at 500°C, ρc of p-type SiC increased after it decreased to 1/100 from its initial value; however, in high-temperature-storage tests at 300°C, it was stable up to 1000 hr. The initial decline of ρc was due to formation of titanium-silicide alloy, whose barrier height is lower than that of Ni2Si phase. It was found that ρc increased when the aluminum electrode disappeared because aluminum displaced silicon in the silicon-dioxide layer. In thermal-shock tests (-40°C/300°C), ρc hardly changed up to 2000 cycles, and that trend was constant regardless of SiC carrier type. In both tests, almost no thermal deterioration of ρc around 300°C was observed even in air, so it is concluded that the CBKR structure is robust enough for installation in a high-temperature environment such as a nuclear power plant under decommissioning.

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High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits

Cited by 17 publications

References 27 publications

Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor

Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor

Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors

Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment

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