We report on the growth of planar semipolar ͑1011͒ GaN on ͑1123͒ prepatterned sapphire. This is a method that allows the growth of semipolar oriented ͑1011͒ GaN on large scale. Using x-ray diffraction only the peaks of the desired ͑1011͒ plane could be observed. Scanning electron, transmission electron, and atomic force microscopy measurements show an atomically flat surface. Further investigations using photoluminescence spectroscopy show spectra that are dominated by the near band edge emission. The high crystal quality is furthermore confirmed by the small full width at half maximum values of x-ray rocking curve measurements of less than 400 arcsec.

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The diagnostic designs for the Laser Megajoule (LMJ) will require components to operate in environments far more severe than those encountered in present facilities. This harsh environment will be induced by fluxes of neutrons, gamma rays, energetic ions, electromagnetic radiations, and, in some cases, debris and shrapnel, at levels several orders of magnitude higher than those experienced today on existing facilities. The lessons learned about the vulnerabilities of present diagnostic parts fielded mainly on OMEGA for many years, have been very useful guide for the design of future LMJ diagnostics. The present and future LMJ diagnostic designs including this vulnerability approach and their main mitigation techniques will be presented together with the main characteristics of the LMJ facility that provide for diagnostic protection.

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The Laser Megajoule (LMJ) facility located at CEA/CESTA started to operate in the early 2014 with two quadruplets (20 kJ at 351 nm) focused on target for the first experimental campaign. We present here the first set of gated x-ray imaging (GXI) diagnostics implemented on LMJ since mid-2014. This set consists of two imaging diagnostics with spatial, temporal, and broadband spectral resolution. These diagnostics will give basic measurements, during the entire life of the facility, such as position, structure, and balance of beams, but they will also be used to characterize gas filled target implosion symmetry and timing, to study x-ray radiography and hydrodynamic instabilities. The design requires a vulnerability approach, because components will operate in a harsh environment induced by neutron fluxes, gamma rays, debris, and shrapnel. Grazing incidence x-ray microscopes are fielded as far as possible away from the target to minimize potential damage and signal noise due to these sources. These imaging diagnostics incorporate microscopes with large source-to-optic distance and large size gated microchannel plate detectors. Microscopes include optics with grazing incidence mirrors, pinholes, and refractive lenses. Spatial, temporal, and spectral performances have been measured on x-ray tubes and UV lasers at CEA-DIF and at Physikalisch-Technische Bundesanstalt BESSY II synchrotron prior to be set on LMJ. GXI-1 and GXI-2 designs, metrology, and first experiments on LMJ are presented here.

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Lattice-matched InAlN/GaN high electron mobility transistors (HEMTs) have been prepared in a silicon-on-insulator (SOI)-like configuration. Here, this implies an ultrathin body 50 nm GaN channel/50 nm AlN nucleation layer material structure on sapphire with the active areas confined by mesa etching, resulting in semi-enhancement mode device characteristics. In contrast to conventional technologies, the device characteristics (maximum drain current, threshold voltage and 1 MHz large signal operation) change only within less than approx. 10% up to 600 • C compared to room temperature (RT). The current on/off ratio decreases from 10 10 at RT to 10 6 at 600 • C, due to residual defect activation. These first results of ultrathin body GaN-on-sapphire-based materials and device technology may indicate that essential improvements in the temperature-handling capability of electronic device structures beyond what is common at present may be possible with only limited sacrifice of device performance.

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