GaN-on-insulator technology for high-temperature electronics beyond 400 °C

Herfurth, Patrick; Maier, David; Men, Yakiv; Rosch, R.; Lugani, Lorenzo; Carlin, J.-F.; Grandjean, N.; Kohn, E.

doi:10.1088/0268-1242/28/7/074026

Cited by 20 publications

(9 citation statements)

References 12 publications

(17 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…28,29 Thus, to the best of our knowledge, there has been no reliable switching behaviors observed in memristors at temperatures above 200 o C 29,30 , which has greatly limited their potential applications in harsh electronics, such as those demanded in aerospace, military, automobile, geothermal, oil and gas industries. While common high temperature electronic materials, such as SiC and III-nitride 31,32 , are not adoptable in fabricating memristors, searching for new materials and structures for robust memristors with good performance becomes highly desirable.…”

mentioning

confidence: 99%

Robust memristors based on layered two-dimensional materials

et al. 2018

View full text Add to dashboard Cite

Memristors are a leading candidate for future storage and neuromorphic computing technologies 1-10 due to characteristics such as device scalability, multi-state switching, fast switching speed, high switching endurance and CMOS compatibility 6,[11][12][13][14][15][16] . Most research and development efforts have been focused on improving device switching performance in optimal conditions, and the reliability of memristors in harsh environments such as at high temperature and on bending substrates has so far received much less attention. Since the programming processes in memristors based on traditional oxide materials mostly rely on ion moving and ionic valence changing 16,17 , the thermal instability at elevated temperatures could result in device failure 18 . Thus, to the best of our knowledge, there has been no reliable switching behaviours observed in memristors at temperatures above 200 °C 18,19 , which limits their potential application in harsh electronics such as those demanded in aerospace, military, automobile, geothermal, oil and gas industries. Common high temperature electronic materials, such as SiC and III-nitride 20,21 , are not adoptable in fabricating memristors, and therefore searching for new materials and structures for robust memristors with good performance is desirable.By stacking two-dimensional (2D) layered materials together 22-30 , van der Waals (vdW) heterostructures can combine the superior properties of each 2D component. 2D materials have shown excellent structural stability 31,32 and electrical properties, which could provide significant improvements in the robustness of electronic devices. For example, graphene possesses unparalleled breaking strength, and ultra-high thermal and chemical stabilities 33 ; molybdenum disulfide (MoS 2 ) has shown good flexibility, large Young's modulus (comparable to stainless steel), 34 and excellent thermal stability up to 1,100 °C 32 ; and various functionalized 2D material layers, or certain grain boundaries within 2D materials, have shown switching behaviours [35][36][37][38][39][40][41][42][43][44] . Since both the thickness and roughness of 2D layered materials can be controlled accurately at the atomic scale, the reliability and uniformity of the electronic devices based on such materials and their vdW heterostructures could also be optimized.In this Article, we report robust memristors based on a vdW heterostructure made of fully layered 2D materials (graphene/MoS 2−x O x / graphene), which exhibit repeatable bipolar resistive switching with endurance up to 10 7 and high thermal stability with an operating temperature of up to 340 °C. The MoS 2−x O x layer was found to be responsible for the high thermal stability of the devices by performing high temperature in situ high-resolution transmission electron microscopy (HRTEM) studies. Further in situ scanning transmission electron microscopy (STEM) investigations on the cross section of a functional device revealed a well-defined conduction channel and a switching mechanism based on the migr...

show abstract

mentioning

confidence: 99%

Robust memristors based on layered two-dimensional materials

et al. 2018

View full text Add to dashboard Cite

show abstract

“…al. 29 ). Comparison of the ohmic characteristics between as-formed and aged test structures confirms the stability of the proposed metallization procedure.…”

Section: Resultsmentioning

confidence: 99%

“…The variation in current and slope is attributed to the change in electron mobility with temperature, which is a characteristic feature of all semiconductor devices (similar observation made by Herfurth et. al 29. ).…”

mentioning

confidence: 94%

Multilayer Pt/Al based ohmic contacts for AlGaN/GaN heterostructures stable up to 600°C ambient air

Goyal

Dusari

Bardong

et al. 2016

Solid-State Electronics

View full text Add to dashboard Cite

In this paper, we present a Pt/Al multilayer stack-based ohmic contact metallization for AlGaN/GaN heterostructures. CTLM structures were fabricated to assess the electrical properties of the proposed metallization. The fabricated stack shows excellent stability after more than 100 hours of continuous aging at 600 o C in air.Measured I-V characteristics of the fabricated samples show excellent linearity after the aging. The Pt/Al-based metallization shows great potential for future device and sensor applications in extreme environment conditions.

show abstract

“…On the other hand, III-Nitride technologies, primarily GaN, exhibit substantial performance improvements over the other semiconductors with respect to response speed and operating temperature limits [20], in addition to the temperature stability of electron concentration in the HEMT channel that makes GaN devices more stable over wide temperature ranges. Despite considerable efforts to develop GaN devices operating at HT above 600 °C [27], 800 °C [28], 900 °C [29] and 1000 °C [30], few research projects are directed toward the development of integrated microelectronic circuits and systems based on GaN devices.…”

Section: Introductionmentioning

confidence: 99%

A GaN-Based Wireless Monitoring System for High-Temperature Applications

Hassan

Ali

Trigui

et al. 2019

Sensors

View full text Add to dashboard Cite

A fully-integrated data transmission system based on gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices is proposed. This system targets high-temperature (HT) applications, especially those involving pressure and temperature sensors for aerospace in which the environmental temperature exceeds 350 °C. The presented system includes a front-end amplifying the sensed signal (gain of 50 V/V), followed by a novel analog-to-digital converter driving a modulator exploiting the load-shift keying technique. An oscillation frequency of 1.5 MHz is used to ensure a robust wireless transmission through metallic-based barriers. To retrieve the data, a new demodulator architecture based on digital circuits is proposed. A 1 V amplitude difference can be detected between a high-amplitude (data-on) and a low-amplitude (data-off) of the received modulated signal. Two high-voltage supply levels (+14 V and −14 V) are required to operate the circuits. The layout of the proposed system was completed in a chip occupying 10.8 mm2. The HT characterization and modeling of integrated GaN devices and passive components are performed to ensure the reliability of simulation results. The performance of the various proposed building blocks, as well as the whole system, have been validated by simulation over the projected wide operating temperature range (25–350 °C).

show abstract

GaN-on-insulator technology for high-temperature electronics beyond 400 °C

Cited by 20 publications

References 12 publications

Robust memristors based on layered two-dimensional materials

Robust memristors based on layered two-dimensional materials

Multilayer Pt/Al based ohmic contacts for AlGaN/GaN heterostructures stable up to 600°C ambient air

A GaN-Based Wireless Monitoring System for High-Temperature Applications

Contact Info

Product

Resources

About