In this paper, a physics based analytical model for the bare surface barrier height and two dimensional electron gas density in AlGaN/GaN heterostructures is presented. The model is based on simple charge neutrality electrostatics across the AlGaN barrier layer and that a low density of surface donor states is the source of the two dimensional electron gas. The model shows good agreement with reported experimental results.
A physics based analytical model is presented to describe the bare surface barrier height and the two-dimensional electron gas density in AlGaN/GaN heterostructures versus barrier layer thickness and Al content. Details of the model rely on the extraction of the critical thickness for strain relaxation based on the identification of a signature cusp in experimentally obtained bare surface barrier heights. This information is used to obtain the residual strain and total effective polarization when strain relaxation takes place. The model, which covers both unrelaxed and relaxed barriers, shows good agreement with reported experimental results and promises to become a useful tool in advanced design and characterization of GaN based heterostructures.
In this paper, we present a physics based analytical model to describe the effect of SiN passivation on two-dimensional electron gas density and surface barrier height in AlGaN/GaN heterostructures. The model is based on an extraction technique to calculate surface donor density and surface donor level at the SiN/AlGaN interface. The model is in good agreement with the experimental results and promises to become a useful tool in advanced design and characterization of GaN based heterostructures.
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