We report on the growth of planar semipolar ͑1011͒ GaN on ͑1123͒ prepatterned sapphire. This is a method that allows the growth of semipolar oriented ͑1011͒ GaN on large scale. Using x-ray diffraction only the peaks of the desired ͑1011͒ plane could be observed. Scanning electron, transmission electron, and atomic force microscopy measurements show an atomically flat surface. Further investigations using photoluminescence spectroscopy show spectra that are dominated by the near band edge emission. The high crystal quality is furthermore confirmed by the small full width at half maximum values of x-ray rocking curve measurements of less than 400 arcsec.
The diagnostic designs for the Laser Megajoule (LMJ) will require components to operate in environments far more severe than those encountered in present facilities. This harsh environment will be induced by fluxes of neutrons, gamma rays, energetic ions, electromagnetic radiations, and, in some cases, debris and shrapnel, at levels several orders of magnitude higher than those experienced today on existing facilities. The lessons learned about the vulnerabilities of present diagnostic parts fielded mainly on OMEGA for many years, have been very useful guide for the design of future LMJ diagnostics. The present and future LMJ diagnostic designs including this vulnerability approach and their main mitigation techniques will be presented together with the main characteristics of the LMJ facility that provide for diagnostic protection.
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