Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600$^{\circ} {\rm C}$) Electronics

Herfurth, Patrick; Maier, David; Lugani, Lorenzo; Carlin, J.-F.; Rosch, R.; Men, Yakiv; Grandjean, N.; Kohn, E.

doi:10.1109/led.2013.2245625

Cited by 29 publications

(16 citation statements)

References 11 publications

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“…Some commercial thermocouples can measure temperatures up to 2 300 °C, however, the output signal from thermocouples is weak and they drift significantly during long‐term operation under high temperature . SiC and GaN based sensors were demonstrated up to 600 °C, however, these active‐circuit‐based temperature sensors require complicated heat shielding and wire routing. Other advancements using SiC based micro sensors have been tested in a harsh chemical environment, however, the complexity of the fabrication process makes them costly .…”

Section: Introductionmentioning

confidence: 99%

Metamaterial Based Passive Wireless Temperature Sensor

et al. 2017

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This paper presents the fabrication, modeling, and testing of a metamaterial based passive wireless temperature sensor consisting of an array of closed ring resonators (CRRs) embedded in a dielectric material matrix. A mixture of 70 vol% Boron Nitride (BN) and 30 vol% Barium Titanate (BTO) is used as the dielectric matrix and copper washers are used as CRRs. Conventional powder compression is used for the sensor fabrication. The feasibility of wireless temperature sensing is demonstrated up to 200 C. The resonance frequency of the sensor decreases from 11.93 GHz at room temperature to 11.85 GHz at 200 C, providing a sensitivity of 0.462 MHz C. The repeatability of temperature sensing tests is carried out to quantify the repeatability. The highest standard deviation observed is 0.012 GHz at 200 C.

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Section: Introductionmentioning

confidence: 99%

Metamaterial Based Passive Wireless Temperature Sensor

et al. 2017

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“…(1) There is a tradeoff between sensor size and Q factor. When the resonator is heavily loaded (for a small sensor gap), the resonant frequency is reduced due to the large c p as shown in equation (2). The reduced resonant frequency will lead to less free-space path loss and therefore increase sensing range.…”

Section: Design Of the Pressure Sensor Based On An Evanescent-mode Camentioning

confidence: 99%

“…For easier demoulding, silicon spray lubricant (3-IN-ONE 10041) was applied on the Teflon mould before the soft-lithography process. (2) The PDC precursor in liquid phase was filled into the Teflon mould as shown in Fig. 10(b).…”

Section: Fabrication Process Of Pdc Pressure Sensormentioning

confidence: 99%

“…For aforementioned applications, pressure sensors need to be passive due to the fact that semiconductor devices and circuits typically fail at temperatures above 600 o C [2,3]. Passive pressure sensors based on resistive [4,5] or capacitive [6,7] sensing mechanisms were proposed to survive high temperatures above 400 o C. However, wire interconnection is required to interrogate these sensors, which is main failure mechanism for gas turbine applications [8].…”

Section: Introductionmentioning

confidence: 99%

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Evanescent-mode-resonator-based and antenna-integrated wireless passive pressure sensors for harsh-environment applications

Cheng

Shao

Ebadi

et al. 2014

Sensors and Actuators A: Physical

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“…The statistical data of InAlN/GaN heterostructure , and the green squares are the InAlN/GaN data of our group.…”

Section: Introductionmentioning

confidence: 99%

Ultrathin InAlN/GaN heterostructures with high electron mobility

Fang

Feng

Yin

et al. 2015

Physica Status Solidi (b)

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The ultrathin InAlN/GaN heterostructure with 3 nm thickness was grown by metal organic chemical vapor deposition, and a room‐temperature mobility of 2175 cm2/V · s at sheet density of 1.39 × 1013 cm−2 was achieved. Excellent crystalline and structural quality of the ultrathin InAlN/GaN heterostructure was revealed by transmission electron microscopy and atom force microscopy. The double periodicity of the Shubnikov–de Haas (SdH) oscillation was observed in the magnetoresistance measurements, and the energy separation between the two subbands was determined as 116 meV. It was found that the smaller interface electric field for the ultrathin InAlN/GaN was responsible for the smaller energy separations, which facilitated the occupation of the second subband.

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Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600$^{\circ} {\rm C}$) Electronics

Cited by 29 publications

References 11 publications

Metamaterial Based Passive Wireless Temperature Sensor

Metamaterial Based Passive Wireless Temperature Sensor

Evanescent-mode-resonator-based and antenna-integrated wireless passive pressure sensors for harsh-environment applications

Ultrathin InAlN/GaN heterostructures with high electron mobility

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