M. Takase scite author profile

Low sheet resistance and extremely shallow profiles are achieved by plasma doping with low process damage and high activation efficiency. High performance pMOSFETs have been also fabricated by taking advantage of wellcontrolled plasma doped extensions.Linear transconductance (Gm) of the pMOSFET with plasma doped extensions is about 30% larger than that of 10 keV ion implanted device with same source/drain junction depth.

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Energy distribution and depth profile in BF3 plasma doping

Kwok

Chu

Takase

et al. 2001

Surface and Coatings Technology

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An over 120 dB wide-dynamic-range 3.0 μm pixel image sensor with in-pixel capacitor of 41.7 fF/um² and high reliability enabled by BEOL 3D capacitor process

Takase

Isono

Tomekawa

et al. 2018

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Alignment Tolerance Control of the Micro CPV Array Using Monte Carlo Methods

Araki

Lee

Hayashi

et al. 2019

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12 3

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M. Takase

Thin concentrator photovoltaic module with micro-solar cells which are mounted by self-align method using surface tension of melted solder

6.1 An over 120dB simultaneous-capture wide-dynamic-range 1.6e− ultra-low-reset-noise organic-photoconductive-film CMOS image sensor

First demonstration of 0.9 μm pixel global shutter operation by novel charge control in organic photoconductive film

Plasma doping for silicon

Shallow source/drain extensions for pMOSFETs with high activation and low process damage fabricated by plasma doping

Energy distribution and depth profile in BF3 plasma doping

An over 120 dB wide-dynamic-range 3.0 μm pixel image sensor with in-pixel capacitor of 41.7 fF/um² and high reliability enabled by BEOL 3D capacitor process

Alignment Tolerance Control of the Micro CPV Array Using Monte Carlo Methods

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Product

Resources

About

M. Takase

Thin concentrator photovoltaic module with micro-solar cells which are mounted by self-align method using surface tension of melted solder

6.1 An over 120dB simultaneous-capture wide-dynamic-range 1.6e− ultra-low-reset-noise organic-photoconductive-film CMOS image sensor

First demonstration of 0.9 μm pixel global shutter operation by novel charge control in organic photoconductive film

Plasma doping for silicon

Shallow source/drain extensions for pMOSFETs with high activation and low process damage fabricated by plasma doping

Energy distribution and depth profile in BF3 plasma doping

An over 120 dB wide-dynamic-range 3.0 μm pixel image sensor with in-pixel capacitor of 41.7 fF/um2 and high reliability enabled by BEOL 3D capacitor process

Alignment Tolerance Control of the Micro CPV Array Using Monte Carlo Methods

Contact Info

Product

Resources

About

An over 120 dB wide-dynamic-range 3.0 μm pixel image sensor with in-pixel capacitor of 41.7 fF/um² and high reliability enabled by BEOL 3D capacitor process