Plasma doping for silicon

Mizuno, B.; Nakayama, Ichiro; Takase, M.; Nakaoka, H.; Kubota, Masafumi

doi:10.1016/0257-8972(96)02881-2

Cited by 23 publications

(7 citation statements)

References 7 publications

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“…In this study, a sputter doping [8,9] was attempted to dope silicon and zinc impurities to cBN. Thin rod-shaped solids of pure silicon and zinc were sputtered during the film deposition by applying -200 V DC bias in a phase-regulated RF bias sputtering system.…”

Section: Methodsmentioning

confidence: 99%

Preparation of High Conductive Cubic Boron Nitride Thin Films by in-situ zinc Doping

Nose

Yoshida

2006

MRS Proc.

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Silicon and zinc were doped to cubic boron nitride (cBN) thin films by sputtering bulk dopant sources during the film deposition. Concentrations of these two elements showed different in-plane distributions, presumably caused by the difference of the sticking probability on the growing surface. Silicon impurity did not behave as an active dopant in cBN. However, zinc doping enhanced the electric conductivity from 10 -8 to 10 -2 (Ω −1 cm -1 ) as the zinc concentration increased from undoped to approximately 2 %.Mater. Res. Soc. Symp. Proc. Vol. 955

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Section: Methodsmentioning

confidence: 99%

Preparation of High Conductive Cubic Boron Nitride Thin Films by in-situ zinc Doping

Nose

Yoshida

2006

MRS Proc.

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“…Plasma doping have been introduced as an alternative to beamline implantation for its high-throughput and low-cost [58][59][60]. Different from beamline implanter, herein, the target wafer is directly placed inside the plasma of ion sources during the implantation process.…”

Section: Ion Implantation and Advanced Annealing Techniquesmentioning

confidence: 99%

Advances in ultrashallow doping of silicon

Zhang

Chang

Dan

2021

Advances in Physics: X

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Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing. In this review, we give a brief overview on recent research advances in three technologies to form ultrashallow doping, namely molecular monolayer doping, molecular beam epitaxy, and low energy ion implantation. A research perspective will be provided at the end of this review.

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“…[7][8][9][10] In the PIII doping process, the silicon wafer is surrounded by a plasma that contains the desired dopant ions. [7][8][9][10] In the PIII doping process, the silicon wafer is surrounded by a plasma that contains the desired dopant ions.…”

Section: B Plasma Immersion Ion Implantation or Plasma Dopingmentioning

confidence: 99%