Preparation of High Conductive Cubic Boron Nitride Thin Films by in-situ zinc Doping

Abstract

Silicon and zinc were doped to cubic boron nitride (cBN) thin films by sputtering bulk dopant sources during the film deposition. Concentrations of these two elements showed different in-plane distributions, presumably caused by the difference of the sticking probability on the growing surface. Silicon impurity did not behave as an active dopant in cBN. However, zinc doping enhanced the electric conductivity from 10 -8 to 10 -2 (Ω −1 cm -1 ) as the zinc concentration increased from undoped to approximately 2 %.Mater. Res. Soc. Symp. Proc. Vol. 955