Articles you may be interested inSilicon nanocrystals with high boron and phosphorus concentration hydrophilic shell-Raman scattering and Xray photoelectron spectroscopic studies

A new doping method for the vertical sidewall of a trench by electron cyclotron resonance plasma is described. The plasma was produced under a pressure of 5×10−4 Torr. A doped layer was formed uniformly along the sidewall of a trench with subhalf micron width and an aspect ratio of 6.2. By using a de-ionized water cooling system, the wafer temperature was maintained below 120 °C and the boron dopant was introduced without damage to the photoresist.

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Vacancy-type defects in plasma immersion B-implanted Si were probed by a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured and compared with spectra calculated using the projector augmented-wave method. For the as-doped sample, the vacancy-rich region was found to be localized at a depth of 0–10 nm, and the major defect species were determined to be divacancy–B complexes. After spike rapid thermal annealing at 1075 °C, the lineshape parameter S of Doppler broadening spectra corresponding to the high-B-concentration region (4–30 nm) was found to be smaller than the characteristic S value obtained for defect-free Si. From a detailed analysis of the Doppler broadening spectra, the origin of the decrease in the S value was attributed to the trapping of positrons by negatively charged B clusters such as icosahedral B12.

A solution for conformal n-type finFET extension doping is demonstrated, yielding I ON values of 1.23 mA/µm at I OFF =100 nA/um at 1V. This high device performance results from 40% reduced external resistance, which in term is stemming from 130% increased fin sidewall doping (confirmed by SIMS, SSRM and Atom Probe) relative to ion implant process. In this work we also report lowered gate leakage due to the damagefree extension doping. Introduction and need for conformal doping