Articles you may be interested inSilicon nanocrystals with high boron and phosphorus concentration hydrophilic shell-Raman scattering and Xray photoelectron spectroscopic studies
The effect of substrate-temperature during the deposition of lanthanum oxide on the chemical structure of lanthanum oxide/Si(100) interfacial transition layer formed between lanthanum oxide and Si-substrate was studied from the measurements of angle-resolved Si 1s, O 1s and La 3d 5/2 photoelectron spectra. In the case of the deposition at room temperature the amount of lanthanum silicate (La-silicate) was extremely small, and was not affected by the post deposition annealing (PDA) at 300°C, and increased by PDA at temperature above 500°C. On the other hand, in the case of the deposition at 300°C the amount of La-silicate increased appreciably by PDA even at 300°C. Therefore, the existence of La-silicate accelerates the formation of La-silicate by PDA.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.