B/sub 2/H/sub 6/ plasma doping with "in-situ He pre-amorphization"

Sasaki, Y.; Jin, C.G.; Tamura, Hideo; Mizuno, B.; Higaki, R.; Satoh, T.; Majima, K.; Sauddin, H.; Takagi, K.; Ohmi, Shun–ichiro; Tsutsui, Kazuo

doi:10.1109/vlsit.2004.1345466

Cited by 22 publications

(18 citation statements)

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“…In the advanced process node era of 32nm and beyond, it is sure that this SRPD is mandatory for both pMOS FinFETs and planar pMOSFETs. Previous results [3][4][5] This work Item 8x10 -9 -8x10 -10 A/cm 2 @ N D 4x10 14 cm -3 5x10 -5 -5x10 -6 A/cm 2 @ N D 2x10 18 cm -3 8x10 -9 -8x10 -10 A/cm 2 @ N D 4x10 14 cm -3 5x10 -5 -5x10 -6 A/cm 2 @ N D 2x10 18 cm -3 Al : < 2E10 cm -2 Other : < 1E10 cm -2 Al : < 2E10 cm -2 Other : < 1E10 cm - …”

Section: Resultsmentioning

confidence: 93%

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Conformal doping for FinFETs and precise controllable shallow doping for planar FET manufacturing by a novel B<inf>2</inf>H<inf>6</inf>/Helium Self-Regulatory Plasma Doping process

Sasaki¹,

Okashita²,

Nakamoto³

et al. 2008

2008 IEEE International Electron Devices Meeting

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A new Self-Regulatory Plasma Doping (SRPD) technique with B 2 H 6 /Helium gas plasma has been successfully developed that provide conformal doping for fins and precise controllable ultra-shallow doping for planar FET. Manufacturing level of process controllability (<1% on dose) of the new SRPD has been realized, and advantage of the SRPD has been verified with FinFETs with metal/high-k gate stack and planar pMOSFETs for the first time. Short channel effect (SCE) improvement for FinFETs is clearly obtained. Dramatically I on enhancement (+14% I on at the I off of 10 -8 A/um vs. ion implant ref.) with SCE suppression for planar pMOSFETs is also realized. This new SRPD will be the excellent compatible doping method for pMOS FinFETs as well as planar pMOSFETs extension for 32nm node and beyond.

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Section: Resultsmentioning

confidence: 93%

“…Some techniques have been proposed as solutions of this requirement. Plasma doping (PD) is plasma based doping technique ( [3][4][5][6][7] and Table 1). Vapor phase deposition (VPD) and atomic layer doping (ALD) are also methods utilizing thermal decomposition [8].…”

Section: Introductionmentioning

confidence: 99%

Conformal doping for FinFETs and precise controllable shallow doping for planar FET manufacturing by a novel B<inf>2</inf>H<inf>6</inf>/Helium Self-Regulatory Plasma Doping process

Sasaki¹,

Okashita²,

Nakamoto³

et al. 2008

2008 IEEE International Electron Devices Meeting

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“…9(a). It brings a high boron activation [3]. On the other hand, no defects are remained after spike RTA ( Fig.…”

Section: A Technologymentioning

confidence: 93%

Junction Technology for 2D and 3D Devices: Self Regulation Plasma Doping SRPD

Mizuno¹

2010

ECS Trans.

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“…Plasma doping (PD) has been proposed as one of the most promising alternatives to replace the conventional low energy ion implantation for the fabrication of advanced devices of 45nm technology node and beyond as it presents high productivity and unique advantages on junction performance due to low sheet resistance and steep junction abruptness [1][2][3]. We demonstrated a novel selfregulatory PD (SR-PD) method, and successfully achieved the uniformity and the dosage control with accuracy of less than 1.5 % [4].…”

Section: Introductionmentioning

confidence: 99%

Comparison of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I) samples by using hard X‐ray photoelectron spectroscopy (HX‐PES)

Jin¹,

Kobata

Sasaki³

et al. 2008

Phys. Status Solidi (c)

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We measured HX‐PES (Si 1s) of ultra low energy ion implantion (I/I) samples combined with Ge pre‐amorphizaiton ion implantation (Ge‐PAI) before and after spike RTA, and compared it with that of plasma doping (PD) samples. As‐doped I/I sample showed higher hole density compared to as‐doped PD sample due to lower defect induced carrier trap. Ge‐PAI+I/I sample showed strong asymmetric in lower binding energy region due to Si‐Ge bonding. After spike RTA, PD sample showed superior impurity activation than that of Ge‐PAI+I/I sample. Both Ge‐PAI+I/I and PD sample showed excellent recrystallization after spike RTA. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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B/sub 2/H/sub 6/ plasma doping with "in-situ He pre-amorphization"

Cited by 22 publications

References 0 publications

Conformal doping for FinFETs and precise controllable shallow doping for planar FET manufacturing by a novel B<inf>2</inf>H<inf>6</inf>/Helium Self-Regulatory Plasma Doping process

Conformal doping for FinFETs and precise controllable shallow doping for planar FET manufacturing by a novel B<inf>2</inf>H<inf>6</inf>/Helium Self-Regulatory Plasma Doping process

Junction Technology for 2D and 3D Devices: Self Regulation Plasma Doping SRPD

Comparison of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I) samples by using hard X‐ray photoelectron spectroscopy (HX‐PES)

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