Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam

Uedono, Akira; Tsutsui, Kazuo; Ishibashi, Shoji; Watanabe, Hirokazu; Kubota, Shoji; Nakagawa, Yosuke; Mizuno, B.; Hattori, Takeo

doi:10.1143/jjap.49.051301

Cited by 22 publications

(14 citation statements)

References 38 publications

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“…This S parameter is an index of the number and size of vacancy-type defects [7]. The details of the PAS measurement system are described elsewhere [10], [11]. Effective minority carrier lifetime was measured using a 9.35-GHz microwave transmittance measurement system and analyzed on the basis of carrier diffusion and annihilation theory [12], [13].…”

Section: Methodsmentioning

confidence: 99%

Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

Sagara

Uedono

Shibata

2015

IEEE Trans. Semicond. Manufact.

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We investigated the thermal behavior of defects remaining in low-dose (<10 13 cm −2 ) arsenic-and boronimplanted Si after high-temperature (1100 • C) rapid thermal annealing (RTA). The defects remaining after RTA were characterized as vacancy-type defects, and confirmed to be created by nonequilibrium states that occur during the extremely rapid cooling step of the RTA sequence. They were gradually removed by applying additional furnace annealing (FA) (i.e., thermal equilibrium heating process) at 300-400 • C. At the range of 500-600 • C, however, carbon-and oxygen-related point defects were newly created. These defects were confirmed to be eliminated at 700 • C, and the crystal quality was significantly improved. When using a rapid thermal process for heat treatment after low-dose impurity implantation, it is necessary to apply an equilibrium thermal treatment at >700 • C to remove residual damage as well as to activate impurities.Index Terms-Residual damage, ion implantation, rapid thermal annealing (RTA), silicon.

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Section: Methodsmentioning

confidence: 99%

Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

Sagara

Uedono

Shibata

2015

IEEE Trans. Semicond. Manufact.

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“…All CL measurements were performed at 30K. The Oxygen the amount and size of vacancy-type of defects [4]. The W parameter, which was defmed as the number of annihilation events in the range of 3.4keV s I�EI s 6.8keV, was also obtained to understand the details of defects.…”

Section: Methodsmentioning

confidence: 99%

Detection and characterization of residual damage in low-dose arsenic implanted silicon after high-temperature annealing

Sagara

Hiraiwa

Uedono

et al. 2012

2012 12th International Workshop on Junction Technology

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Residual damage in 'low-dose' implanted and 'high-temperature' annealed Si have not been studied well due to lack of characterization technique and awareness of its risk for device degradation. Tn this study, we detected and characterized residual damage, which is existed in low-dose (1013cm-2 ) As implanted Si after high-temperature (I 100°C) RT A in N2 and O 2 mixed atmosphere. The characterization techniques we selected were CL and PAS methods. It was succeeded to reveal the existence of residual damage and identify its damage as a kind of vacancy-type of defects. Moreover, it was clear that residual damage wastransformed to be the other type of defect by combined with oxygen. The details of defects and their variation during annealing will be discussed in this paper.

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“…In particular, positron annihilation is a superior technique for detecting vacancy-type defects in semiconductors. [19][20][21][22] Since the atomic-level vacancy-type defects are detectable not only on the wafer surface but also inside a wafer, it is useful to evaluate the voids penetrating a wafer caused by thinning.…”

Section: Introductionmentioning

confidence: 99%

Impact of back-grinding-induced damage on Si wafer thinning for three-dimensional integration

Mizushima

Kim

Nakamura

et al. 2014

Jpn. J. Appl. Phys.

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Ultrathin wafers, which enable the low-aspect-ratio through-silicon vias to be formed easily, are indispensable for bumpless three-dimensional (3D) stacking. To clarify thinning-induced damage in detail, atomic-level defects occurring during wafer thinning and due to mechanical stress at microregions of the fracture surface have been studied. Such damage was evaluated by µ-Raman spectroscopy, laser microscopy, transmission electron microscopy, and positron annihilation spectroscopy. Coarse (#320 grit) grinding causes a roughly 500 MPa compressive stress, resulting in the formation of a less than 5 µm defect layer. Fine (#2000 grit) grinding enables the formation of a plane surface and reduces the stress to 100-200 MPa. However, a damaged layer of 200 nm still remains and an almost 100-nm-thick layer of vacancy-type defects exists. After chemical mechanical polishing (CMP), a stress-free surface was obtained and no defects were found except atomic-level vacancies, which were detected in a layer of 4 nm thickness after 1 µm CMP.

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Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam

Cited by 22 publications

References 38 publications

Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

Detection and characterization of residual damage in low-dose arsenic implanted silicon after high-temperature annealing

Impact of back-grinding-induced damage on Si wafer thinning for three-dimensional integration

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