High performance n-MOS finFET by damage-free, conformal extension doping

Zschatzsch, G.; Sasaki, Y.; Hayashi, Shin’ichiro; Togo, M.; Chiarella, T.; Kambham, Ajay Kumar; Mody, Jay; Douhard, Bastien; Horiguchi, N.; Mizuno, B.; Ogura, Mototsugu; Vandervorst, Wilfried

doi:10.1109/iedm.2011.6131680

Cited by 10 publications

(11 citation statements)

References 8 publications

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“…It also suffers from implanting multiple species with multiple energies in a single process which can be a problem when a high level of control is required. 30,31 Our MOVPE approach is presented as an alternative methodology, based on surface in-diffusion, providing a conformal and nondestructive solution for semiconductor doping of non-planar structures and devices.…”

Section: Figmentioning

confidence: 99%

Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion

Duffy¹,

Shayesteh²,

Thomas³

et al. 2014

J. Mater. Chem. C

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This alone has created the need to develop a radically new, nondestructive method for doping. Doping alters the electrical properties of a semiconductor, related to the access resistance. Low access resistance is necessary for high performance technology and reduced power consumption. In this work the authors reduced access resistance in top-down patterned Ge nanowires and Ge substrates by a non-destructive dopant in-diffusion process. Furthermore, an innovative electrical characterisation methodology is developed for nanowire and fin-based test structures to extract important parameters that are related to access resistance such as nanowire resistivity, sheet resistance, and active doping levels. Phosphine or arsine was flowed in a Metalorganic Vapour Phase Epitaxy reactor over heated Ge samples in the range of 650-700 C. Dopants were incorporated and activated in this single step. No Ge growth accompanied this process. Active doping levels were determined by electrochemical capacitance-voltage free carrier profiling to be in the range of 10 19 cm À3 . The nanowires were patterned in an array of widths from 20-1000 nm. Cross-sectional Transmission Electron Microscopy of the doped nanowires showed minimal crystal damage. Electrical characterisation of the Ge nanowires was performed to contrast doping activation in thin-body structures with that in bulk substrates. Despite the high As dose incorporation on unpatterned samples, the nanowire analysis determined that the P-based process was the better choice for scaled features.

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Section: Figmentioning

confidence: 99%

Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion

Duffy¹,

Shayesteh²,

Thomas³

et al. 2014

J. Mater. Chem. C

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“…Classical standard doping techniques like ion implantation may not be suitable for FinFET devices because of the 3D geometry. Several solutions to incorporate dopants in the fin are being explored such as tilted ion implantation [23,153,158], plasma doping [159][160][161][162] or vapor phase doping [163]. Among them, tilted ion implantation remains a strong candidate to introduce dopants into the fin, as it is a conventional and well established technique, although it suffers from specific issues that arise from the particular geometry of these devices.…”

Section: Doping Issues In Finfet Devices: a Challenge In 3dmentioning

confidence: 99%

“…In fact, the lateral diffusion of the dopants into the channel under the gate (gate overlap) is an important parameter that affects the final device performance [160]. This lateral diffusion has been also analyzed by KMC simulations in Fig.…”

Section: Doping Conformalitymentioning

confidence: 99%

“…Nevertheless, conformal doping is more difficult for n-type doping. This is due to the low adsorption efficiency of n-type dopants on Si surfaces that results in poor incorporation of As or P on the fin sidewalls [18,19,160,162,180]. Dopants located at the fin surface are then vulnerable to subsequent resist strip and etching processes (i.e.…”

Section: Doping Conformalitymentioning

confidence: 99%

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Improved physical models for advanced silicon device processing

Pelaz

Marqués

Aboy

et al. 2017

Materials Science in Semiconductor Processing

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We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs.

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“…This technique enables very shallow conformal doping. [15][16][17] Trenches between the fin arrays were filled by off-line processing. Our APT results indicated that the peak boron concentration in the fin sidewall regions was above 3 Â 10 20 atoms/cm 3 , which is higher than the activation level of 1 Â 10 20 atoms/cm 3 by spike and rapid thermal annealing.…”

mentioning

confidence: 99%

Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography

Shimizu

Nozawa

Toyama

et al. 2012

Applied Physics Letters

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Fin field-effect transistors are promising next-generation electronic devices, and the identification of dopant positions is important for their accurate characterization. We report atom probe tomography (APT) of silicon fin structures prepared by a recently developed self-regulatory plasma doping (SRPD) technique. Trenches between fin-arrays were filled using a low-energy focused ion beam to directly deposit silicon, which allowed the analysis of dopant distribution by APT near the surface of an actual fin transistor exposed to air. We directly demonstrate that SRPD can achieve a boron concentration above 1 × 1020 atoms/cm3 at the fin sidewall.

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High performance n-MOS finFET by damage-free, conformal extension doping

Cited by 10 publications

References 8 publications

Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion

Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion

Improved physical models for advanced silicon device processing

Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography

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