Improved physical models for advanced silicon device processing

Abstract

We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs.

Ion‐Implantation in Titania‐Based Plasmonic Photo‐anodes: A Review

“…Herein, R p is the ion's transmission into the target in the direction of incidence. Numerous computer codes [231] have been developed for the range distributions and the most excellent recognized program is the stopping and range of ions in matter (SRIM). [206,220,232,233] The total stopping power is represented as…”

“…Herein, R p is the ion's transmission into the target in the direction of incidence. Numerous computer codes [ 231 ] have been developed for the range distributions and the most excellent recognized program is the stopping and range of ions in matter (SRIM). [ 206,220,232,233 ] The total stopping power is represented as $$\[\left( {\frac{{{\rm{d}}E}}{{{\rm{d}}X}}} \right) = {\left( {\frac{{{\rm{d}}E}}{{{\rm{d}}X}}} \right)_{\rm{e}}} + {\left( {\frac{{{\rm{d}}E}}{{{\rm{d}}X}}} \right)_{\rm{n}}} \cong {S_{\rm{e}}} + {S_{\rm{n}}}\]$$…”

Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit

“…However, the W-S curve of the MWA sample turns around at a much lower S value, indicating a higher N of the P N V cluster where the positron is trapped and annihilated. Compared with the PAS of an MSA-annealed sample, 10 this confirms that the MWA sample is dominated by high-N P N V clusters, whereas the as-grown and MSA samples are dominated by low-N P N V clusters.…”

“…1(a)], presents new challenges for doping and activation. [5][6][7][8][9][10] For example, the source and drain of the MOSFETs may be doped with more than 3 Â 10 21 P/cm 3 , an order of magnitude higher than the equilibrium solubility of P in Si, 11 through in situ doping during epitaxial growth (see the supplementary material) instead of ion implantation. [12][13][14][15][16] Although this helps to reduce the channel resistance through strainenhanced carrier mobility, the free-electron concentration saturates due to dopant compensation while the electrical resistivity increases due to impurity scattering [Fig.…”