2015 IEEE International Electron Devices Meeting (IEDM) 2015
DOI: 10.1109/iedm.2015.7409799
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First demonstration of 0.9 μm pixel global shutter operation by novel charge control in organic photoconductive film

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Cited by 16 publications
(11 citation statements)
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“…The OPDs having conventional structures that absorb light from the bottom are not desirable for stacking the device on an integrated circuit, because bottom thin-film transistors (TFTs) reduce the aperture ratio and hinder OPD light absorption. Instead, an OPDs with transparent top electrode, i.e., a top-absorbing OPD, is necessary. Despite the research on a bottom hole-collection integrated on Si readout circuitry, a bottom electron-collecting electrode is preferred because oxide TFTs having a high carrier mobility, a low processing cost and temperature, and film uniformity are basically n-type. Thus, to apply an OPD to an integrated circuit, the OPD needs to have the following inverted structure: a bottom cathode, an electron extraction layer, a photoactive layer, a hole extraction layer, and a transparent top anode.…”
Section: Introductionmentioning
confidence: 99%
“…The OPDs having conventional structures that absorb light from the bottom are not desirable for stacking the device on an integrated circuit, because bottom thin-film transistors (TFTs) reduce the aperture ratio and hinder OPD light absorption. Instead, an OPDs with transparent top electrode, i.e., a top-absorbing OPD, is necessary. Despite the research on a bottom hole-collection integrated on Si readout circuitry, a bottom electron-collecting electrode is preferred because oxide TFTs having a high carrier mobility, a low processing cost and temperature, and film uniformity are basically n-type. Thus, to apply an OPD to an integrated circuit, the OPD needs to have the following inverted structure: a bottom cathode, an electron extraction layer, a photoactive layer, a hole extraction layer, and a transparent top anode.…”
Section: Introductionmentioning
confidence: 99%
“…Absorbing QDs have been long explored for thinfilm photovoltaics [1,2]. In photodetection applications, they offer facile, monolithic integration and are gaining interest in different imaging concepts [12][13][14], largely building on top of developments with organic photodetector (OPD) integration [15]. Additionally, tuning the quantum confinement peak allows for precise fit for the selected wavelength, and decrease in energy bandgap enables moving the cut-off wavelength even beyond 2 µm.…”
Section: Quantum Dot Photodetector Stackmentioning
confidence: 99%
“…Pixel pitch does not go below 10 μm [ 4 ] which is limited by the hybridization process—the solder bumps need sufficient volume for reliable bonding which in turn is limited by the achievable aspect ratio and pixel spacing. With a thin-film active layer integrated monolithically directly on top of the readout circuit, submicron pixel sizes (0.9 μm state-of-the-art for CMOS image sensors [ 5 ]) can be achieved ( Figure 2 ).…”
Section: Introductionmentioning
confidence: 99%
“…Recently, also perovskite absorbers were successfully integrated [ 12 ]. Organic films integration on CMOS ROIC followed a few improvement rounds by the same group, with the latest generation implemented with 0.9 μm pixel size showing the potential of resolution scaling [ 5 , 13 , 14 ]. Near infrared imaging with solution processed thin-film photodetectors was shown with polymers [ 15 ] and quantum dots (QD) [ 16 ].…”
Section: Introductionmentioning
confidence: 99%